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Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures 期刊论文
SCIENTIFIC REPORTS, 2014, 卷号: 4, 页码: 6521
Authors:  Wang, JM;  Xu, FJ;  Zhang, X;  An, W;  Li, XZ;  Song, J;  Ge, WK;  Tian, GS;  Lu, J;  Wang, XQ;  Tang, N;  Yang, ZJ;  Li, W;  Wang, WY;  Jin, P;  Chen, YH;  Shen, B
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Spin transport study in a Rashba spin-orbit coupling system 期刊论文
SCIENTIFIC REPORTS, 2014, 卷号: 4, 页码: 4030
Authors:  Mei, FH;  Zhang, S;  Tang, N;  Duan, JX;  Xu, FJ;  Chen, YH;  Ge, WK;  Shen, B
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Identification of Helicity-Dependent Photocurrents from Topological Surface States in Bi2Se3 Gated by Ionic Liquid 期刊论文
SCIENTIFIC REPORTS, 2014, 卷号: 4, 页码: 4889
Authors:  Duan, JX;  Tang, N;  He, X;  Shen, B;  Yan, Y;  Zhang, S;  Qin, XD;  Wang, XQ;  Yang, XL;  Xu, FJ;  Chen, YH;  Ge, WK
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Indium Compositional Homogeneity in In0.17Al0.83N Epilayers Grown by Metal Organic Chemical Vapor Deposition 期刊论文
APPLIED PHYSICS EXPRESS, 2012, 卷号: 5, 期号: 10, 页码: 101002
Authors:  Wang JM (Wang, Jiaming);  Xu FJ (Xu, Fujun);  Huang CC (Huang, Chengcheng);  Xu ZY (Xu, Zhengyu);  Zhang X (Zhang, Xia);  Wang Y (Wang, Yan);  Ge WK (Ge, Weikun);  Wang XQ (Wang, Xinqiang);  Yang ZJ (Yang, Zhijian);  Shen B (Shen, Bo);  Li W (Li, Wei);  Wang WY (Wang, Weiying);  Jin P (Jin, Peng)
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Strong circular photogalvanic effect in ZnO epitaxial films 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 97, 期号: 4, 页码: Art. No. 041907
Authors:  Zhang Q (Zhang Q.);  Wang XQ (Wang X. Q.);  Yin CM (Yin C. M.);  Xu FJ (Xu F. J.);  Tang N (Tang N.);  Shen B (Shen B.);  Chen YH (Chen Y. H.);  Chang K (Chang K.);  Ge WK (Ge W. K.);  Ishitani Y (Ishitani Y.);  Yoshikawa A (Yoshikawa A.)
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Ii-vi Semiconductors  Photoconductivity  Photovoltaic Effects  Semiconductor Epitaxial Layers  Spin-orbit Interactions  Valence Bands  Wide Band Gap Semiconductors  Zinc Compounds  
Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix 期刊论文
PHYSICAL REVIEW B, 2009, 卷号: 80, 期号: 3, 页码: Art. No. 035313
Authors:  Yang CL;  Cui XD;  Shen SQ;  Xu ZY;  Ge WK;  Yang CL Univ Hong Kong Dept Phys Hong Kong Hong Kong Peoples R China. E-mail Address: xdcui@hku.hk
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Quantum-wells  Spintronics  Electron  
具有外加磁场的深能级瞬态谱样品台装置及其测量方法 专利
专利类型: 发明, 申请日期: 2007-07-11, 公开日期: 2009-06-04, 2009-06-11
Inventors:  卢励吾;  张砚华;  葛惟昆
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探测半导体能带结构高阶临界点的新方法 专利
专利类型: 发明, 申请日期: 2007-07-11, 公开日期: 2009-06-04, 2009-06-11
Inventors:  谭平恒;  徐仲英;  罗向东;  葛惟昆
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Unusual carrier thermalization in a dilute GaAs1-xNx alloy 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 6, 页码: Art.No.061905
Authors:  Tan PH;  Xu ZY;  Luo XD;  Ge WK;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW;  Tan, PH, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: pt290@cam.ac.uk;  yong_zhang@nrel.gov
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Photoluminescence  
Enhanced near-infrared photoluminescence from isoelectronic luminescent centers in sulfur-implanted silicon with copper or silver coimplantation 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 8, 页码: Art.No.081101
Authors:  Zhang JG;  Wang XX;  Cheng BW;  Yu JZ;  Wang QM;  Hau J;  Ding L;  Ge WK;  Zhang, JG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: jianguochang@yahoo.com
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Doped Crystalline Silicon