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Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 7, 页码: 1242-1245
Authors:  Ma Zhifang;  Wang Yutian;  Jiang Desheng;  Zhao Degang;  Zhang Shuming;  Zhu Jianjun;  Liu Zongshun;  Sun Baojuan;  Duan Ruifei;  Yang Hui;  Liang Junwu
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高响应度GaN肖特基势垒紫外探测器的性能与分析 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 4, 页码: 592-596
Authors:  刘宗顺;  赵德刚;  朱建军;  张书明;  段俐宏;  王海;  史永生;  刘文宝;  张爽;  江德生;  杨辉
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非故意掺杂n型GaN的负持续光电导现象 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 6, 页码: 878-882
Authors:  苏志国;  许金通;  陈俊;  李向阳;  刘骥;  赵德刚
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高量子效率前照式GaN基p-i-n结构紫外探测器 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 5, 页码: 896-899
Authors:  游达;  汤英文;  赵德刚;  许金通;  徐运华;  龚海梅
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Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 3, 页码: 499-505
Authors:  Li Deyao;  Huang Yongzhen;  Zhang Shuming;  Zhong Ming;  Ye Xiaojun;  Zhu Jianjun;  Zhao Degang;  Chen Lianghui;  Yang Hui;  Liang Junwu
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Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 3, 页码: 419-424
Authors:  Chen Jun;  Wang Jianfeng;  Wang Hui;  Zhao Degang;  Zhu Jianjun;  Zhang Shuming;  Yang Hui
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Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 2, 页码: 414-417
Authors:  Yang Hui;  Chen Lianghui;  Zhang Shuming;  Chong Ming;  Zhu Jianjun;  Zhao Degang;  Ye Xiaojun;  Li Deyao;  Liu Zongshun;  Duan Lihong;  Zhao Wei;  Wang Hai;  Shi Yongsheng;  Cao Qing;  Sun Jie;  Chen Jun;  Liu Suying;  Jin Ruiqin;  Liang Junwu
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GaN外延材料中持续光电导的光淬灭 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 2, 页码: 304-308
Authors:  李娜;  赵德刚;  刘宗顺;  朱建军;  张书明;  杨辉
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p型GaN的掺杂研究 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 3, 页码: 508-512
Authors:  金瑞琴;  朱建军;  赵德刚;  刘建平;  张纪才;  杨辉
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GaN生长速率的研究 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 4, 页码: 726-729
Authors:  金瑞琴;  赵德刚;  刘建平;  张纪才;  杨辉
Adobe PDF(273Kb)  |  Favorite  |  View/Download:702/278  |  Submit date:2010/11/23