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Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors 期刊论文
Journal of Vacuum Science & Technology B, 2016, 卷号: 34, 期号: 1, 页码: 011204
Authors:  Xiaojing Li;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Jianjun Zhu;  Zongshun Liu;  Lingcong Le;  Jing Yang;  Xiaoguang He;  Liqun Zhang;  Shuming Zhang;  Jianping Liu;  Hui Yang
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Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 卷号: 33, 期号: 1, 页码: 011209
Authors:  Lingcong Le;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Zongshun Liu;  Jianjun Zhu;  Jing Yang;  Xiaojing Li;  Xiaoguang He;  Jianping Liu;  Shuming Zhang;  Hui Yang
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Dielectric microwave properties of Si-integrated pulsed laser deposited (Ba, Sr)TiO3 thin films up to 110 GHz 期刊论文
Applied Physics Letters, 2015, 卷号: 107, 页码: 052905
Authors:  Xi Ning;  Shuming Chen;  Jinying Zhang;  Hui Huang;  Lei Wang
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Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth 期刊论文
Applied Physics Letters, 2013, 卷号: 103, 期号: 15, 页码: 152109
Authors:  Zengcheng Li, Jianping Liu, Meixin Feng, Kun Zhou, Shuming Zhang, Hui Wang, Deyao Li, Liqun Zhang, Degang Zhao, Desheng Jiang, Huaibing Wang,and Hui Yang
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Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2013, 卷号: 371, 页码: 7-10
Authors:  Zhou, Kun;  Liu, Jianping;  Zhang, Shuming;  Li, Zengcheng;  Feng, Meixin;  Li, Deyao;  Zhang, Liqun;  Wang, Feng;  Zhu, Jianjun;  Yang, Hui
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纳米折叠InGaN/GaN LED材料生长及器件特性 期刊论文
物理学报, 2011, 卷号: 60, 期号: 7, 页码: 076104-1-076104-4
Authors:  陈贵锋;  谭小动;  万尾甜;  沈俊;  郝秋艳;  唐成春;  朱建军;  刘宗顺;  赵德刚;  张书明
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Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 卷号: 509, 期号: 3, 页码: 748-750
Authors:  Deng Y;  Zhao DG;  Le LC;  Jiang DS;  Wu LL;  Zhu JJ;  Wang H;  Liu ZS;  Zhang SM;  Yang H;  Liang JW;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
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Nitride Materials  Crystal Growth  Composition Fluctuations  X-ray Diffraction  Layer  
Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.84339
Authors:  Zhu JH;  Wang LJ;  Zhang SM;  Wang H;  Zhao DG;  Zhu JJ;  Liu ZS;  Jiang DS;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
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The investigation on carrier distribution in InGaN/GaN multiple quantum well layers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.93117
Authors:  Zhu JH;  Zhang SM;  Wang H;  Zhao DG;  Zhu JJ;  Liu ZS;  Jiang DS;  Qiu YX;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
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Diodes  Efficiency  
氮化镓基多波段探测器及其制作方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-13, 2010-08-12
Inventors:  刘文宝;  孙 苋;  赵德刚;  刘宗顺;  张书明;  朱建军;  杨 辉
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