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Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2013, 卷号: 371, 页码: 7-10
Authors:  Zhou, Kun;  Liu, Jianping;  Zhang, Shuming;  Li, Zengcheng;  Feng, Meixin;  Li, Deyao;  Zhang, Liqun;  Wang, Feng;  Zhu, Jianjun;  Yang, Hui
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Enhanced performance of p-GaN by Mg delta doping 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 304, 期号: 1, 页码: 7-10
Authors:  Wang HB (Wang Huaibing);  Liu JP (Liu Jianping);  Niu NH (Niu Nanhui);  Shen GD (Shen Guangdi);  Zhang SM (Zhang Shuming);  Wang, HB, Beijing Univ Technol, Beijing Optoelect Technol Lab, Beijing 100022, Peoples R China. 电子邮箱地址: wanghb328@gmail.com
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Delta Doping  
MOCVD生长AlGaInN外延层的光学性质研究 期刊论文
红外与毫米波学报, 2005, 卷号: 24, 期号: 3, 页码: 193-197
Authors:  江德生;  刘建平;  杨辉
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Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 4, 页码: 645-650
Authors:  Shen Xiaoming;  Wang Yutian;  Wang Jianfeng;  Liu Jianping;  Zhang Jicai;  Guo Liping;  Jia Quanjie;  Jiang Xiaoming;  Hu Zhengfei;  Yang Hui;  Liang Junwu
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p型GaN的掺杂研究 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 3, 页码: 508-512
Authors:  金瑞琴;  朱建军;  赵德刚;  刘建平;  张纪才;  杨辉
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GaN生长速率的研究 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 4, 页码: 726-729
Authors:  金瑞琴;  赵德刚;  刘建平;  张纪才;  杨辉
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AlInGaN 四元合金及InGaN 基发光二极管的外延生长和性质 学位论文
, 北京: 中国科学院半导体研究所, 2004
Authors:  刘建平
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Si(111)衬底无微裂GaN的MOCVD生长 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 4, 页码: 410-414
Authors:  张宝顺;  伍墨;  陈俊;  沈晓明;  冯淦;  刘建平;  史永生;  段丽宏;  朱建军;  杨辉
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LSIS-II逻辑模拟系统 学位论文
, 北京: 中国科学院半导体研究所, 1990
Authors:  刘剑平
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