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p型GaN的掺杂研究
金瑞琴; 朱建军; 赵德刚; 刘建平; 张纪才; 杨辉
2005
Source Publication半导体学报
Volume26Issue:3Pages:508-512
Abstract采用正交实验设计方法设计p型GaN的生长,通过较少的实验,优化了影响p型GaN性质的三个生长参数:Mg流量、生长温度和Ⅴ/Ⅲ比.过量的Mg源流量、过高的生长温度、过大的Ⅴ/Ⅲ比都会降低自由空穴浓度.还研究了退火温度对p型GaN的载流子浓度和光学性质的影响.实验结果表明,700~750℃范围为最佳退火温度.
metadata_83中国科学院半导体研究所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:1958098
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17113
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
金瑞琴,朱建军,赵德刚,等. p型GaN的掺杂研究[J]. 半导体学报,2005,26(3):508-512.
APA 金瑞琴,朱建军,赵德刚,刘建平,张纪才,&杨辉.(2005).p型GaN的掺杂研究.半导体学报,26(3),508-512.
MLA 金瑞琴,et al."p型GaN的掺杂研究".半导体学报 26.3(2005):508-512.
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