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Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 7, 页码: 1242-1245
Authors:  Ma Zhifang;  Wang Yutian;  Jiang Desheng;  Zhao Degang;  Zhang Shuming;  Zhu Jianjun;  Liu Zongshun;  Sun Baojuan;  Duan Ruifei;  Yang Hui;  Liang Junwu
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Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 4, 页码: 645-650
Authors:  Shen Xiaoming;  Wang Yutian;  Wang Jianfeng;  Liu Jianping;  Zhang Jicai;  Guo Liping;  Jia Quanjie;  Jiang Xiaoming;  Hu Zhengfei;  Yang Hui;  Liang Junwu
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双异质外延Si/Al_2O_3/Si薄膜制作的CMOS器件 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 7, 页码: 824-830
Authors:  昝育德;  王俊;  李瑞云;  韩秀峰;  王建华;  于芳;  刘忠立;  王玉田;  王占国;  林兰英
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使用 X射线衍射技术判定 Si C单晶体的结构和极性(英文) 期刊论文
半导体学报, 2001, 卷号: 22, 期号: 1, 页码: 35
Authors:  郑新和;  渠波;  王玉田;  杨辉;  梁骏吾
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快速退火对SiGe/Si多量子阱p-i-n光电二极管的影响(英文) 期刊论文
半导体学报, 2001, 卷号: 22, 期号: 6, 页码: 695
Authors:  李成;  杨沁清;  王红杰;  王玉田;  余金中;  王启明
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C离子注入Si中Si-C合金的形成及其特征 期刊论文
半导体学报, 2001, 卷号: 22, 期号: 8, 页码: 979
Authors:  王引书;  李晋闽;  王玉田;  王衍斌;  林兰英
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高质量立方相InGaN的生长 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 6, 页码: 548
Authors:  李顺峰;  杨辉;  徐大鹏;  赵德刚;  孙小玲;  王玉田;  张书明
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UHV/CVD生长SiGe/Si异质结构材料 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 3, 页码: 250
Authors:  成步文;  李代宗;  黄昌俊;  于卓;  张春晖;  王玉田;  余金中;  王启明
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GaAs(001)衬底上MOCVD生长的立方相GaN外延薄膜的光学性质研究 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 3, 页码: 225
Authors:  孙小玲;  杨辉;  李国华;  郑联喜;  李建斌;  王玉田;  王占国
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Strain Analysis of Cubic AlGaN/GaNGrownon GaAs(100) Substrate by MOVPE 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 10, 页码: 921
Authors:  徐大鹏;  杨辉;  赵德刚;  郑联喜;  李建斌;  王玉田;  李顺峰;  吴荣汉
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