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A wrinkled structure with broadband and omnidirectional light-trapping abilities for improving the performance of organic solar cells with low defect density 期刊论文
Nanoscale, 2019, 卷号: 11, 页码: 22467
Authors:  Kong Liu;  Yang Sun;  Qicong Li;  Cheng Yang;  Muhammad Azam;  Zhijie Wang;  Shengchun Qu;  Zhanguo Wang
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Two-Dimensional Quantum Transport in Free-Standing InSb Nanosheets 期刊论文
Nano Letters, 2019, 卷号: 19, 期号: 1, 页码: 561−569
Authors:  Ning Kang;   Dingxun Fan;   Jinhua Zhi;   Dong Pan;   Sen Li;   Cheng Wang;   Jingkun Guo;   Jianhua Zhao;   Hongqi Xu
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Broadband linearly chirped light source with narrow linewidth based on external modulation 期刊论文
Optics Letters, 2018, 卷号: 43, 期号: 17, 页码: 4144-4147
Authors:  ZHAOYU LU ;   TIANXIN YANG ;   ZHIYONG LI ;   CHENG GUO ;   ZHAOYING WANG ;   DONGFANG JIA ;   CHUNFENG GE
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Texture Evolution and Grain Competition in NiGe Film on Ge(001) 期刊论文
Applied Physics Express, 2013, 卷号: 6, 期号: 7, 页码: 075505
Authors:  Huang, Wei;  Tang, Mengrao;  Wang, Chen;  Li, Cheng;  Li, Jun;  Chen, Songyan;  Xue, Chunlai;  Lai, Hongkai
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Si基外延Ge薄膜中残余应变的检测与分析 期刊论文
光电子·激光, 2012, 卷号: 23, 期号: 9, 页码: 1749-1753
Authors:  周志文,李成,余金中
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Detection and analysis of residual strain of epitaxial Ge films on Si substrates 期刊论文
Guangdianzi Jiguang/Journal of Optoelectronics Laser, 2012, 卷号: 23, 期号: 9, 页码: 1749-1753
Authors:  Zhou, Zhi-Wen;  Li, Cheng;  Yu, Jin-Zhong
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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.69
Authors:  Liu JM;  Liu XL;  Li CM;  Wei HY;  Guo Y;  Jiao CM;  Li ZW;  Xu XQ;  Song HP;  Yang SY;  Zhu QS;  Wang ZG;  Yang AL;  Yang TY;  Wang HH;  Liu, JM, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. liujianming@semi.ac.cn;  xlliu@semi.ac.cn
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Cathodoluminescence Characterization  Gallium Nitride  Stresses  Layers  Heterostructure  Deposition  Constants  Mechanism  Sapphire  Strain  
采用低温缓冲层技术在Si衬底上生长高质量Ge薄膜 期刊论文
光电子·激光, 2011, 卷号: 22, 期号: 7, 页码: 1030-1033
Authors:  周志文;  贺敬凯;  李成;  余金中
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Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique 期刊论文
Guangdianzi Jiguang/Journal of Optoelectronics Laser, 2011, 卷号: 22, 期号: 7, 页码: 1030-1033
Authors:  Zhou, Zhi-Wen;  He, Jing-Kai;  Li, Cheng;  Yu, Jin-Zhong;  Zhou, Z.-W.(zhouzw@sziit.com.cn)
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Atomic Force Microscopy  Atomic Spectroscopy  Chemical Vapor Deposition  Diffraction  Epitaxial Growth  Germanium  Raman Spectroscopy  Semiconducting Silicon Compounds  Substrates  Surface Morphology  Ultrahigh Vacuum  x Ray Diffraction  
Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition 期刊论文
OPTICS COMMUNICATIONS, 2010, 卷号: 283, 期号: 18, 页码: 3404-3407
Authors:  Zhou ZW (Zhou Zhiwen);  He JK (He Jingkai);  Wang RC (Wang Ruichun);  Li C (Li Cheng);  Yu JZ (Yu Jinzhong);  Zhou, ZW, Shenzhen Inst Informat & Technol, Dept Elect Commun Technol, Shenzhen 518029, Guangdong, Peoples R China. 电子邮箱地址: zhouzw@sziit.com.cn
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Germanium  Hererojunction  Photodiode  Tensile Strain