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Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 2, 页码: Article no.27801
Authors:  Yang XR;  Xu B;  Wang HF;  Zhao GQ;  Shi SH;  Shen XZ;  Li JF;  Wang ZG;  Yang, XR, Handan Coll, Dept Phys & Elect Engn, Handan 056005, Peoples R China. yangxr1976@126.com
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Continuous-wave Operation  Emission  Lasers  Wavelength  Excitons  Energy  
Sterilization system for air purifier by combining ultraviolet light emitting diodes with TiO2 期刊论文
JOURNAL OF CHEMICAL TECHNOLOGY AND BIOTECHNOLOGY, 2009, 卷号: 84, 期号: 10, 页码: 1437-1440
Authors:  Huang XH (Huang, Xiaohui);  Wang H (Wang, Huaibing);  Yin S (Yin, Song);  Chen XR (Chen, Xiaorong);  Chen W (Chen, Wei);  Yang H (Yang, Hui);  Wang, H, CAS, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China. 电子邮箱地址: hbwang2006@sinano.ac.cn
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Light Emitting Diode  
InP 基InAs 纳米结构形貌控制及激光器研究 学位论文
, 北京: 中国科学院半导体研究所, 2007
Authors:  杨新荣
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Room-temperature continuous-wave operation of InAs quantum-wire laser on InP(001) substrate 期刊论文
ELECTRONICS LETTERS, 2006, 卷号: 42, 期号: 13, 页码: 757-758
Authors:  Yang XR (Yang X. R.);  Xu B (Xu B.);  Wang ZG (Wang Z. G.);  Jin P (Jin P.);  Liang P (Liang P.);  Hu Y (Hu Y.);  Sun H (Sun H.);  Chen YH (Chen Y. H.);  Liu FL (Liu F. L.);  Yang, XR, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yangxr@mail.semi.ac.cn
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Dots  
高质量InAs单晶材料的制备及其性质 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 8, 页码: 1391-1395
Authors:  赵有文;  孙文荣;  段满龙;  董志远;  杨子祥;  吕旭如;  王应利
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磷化铟单晶衬底的缺陷控制和高质量表面制备 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 12, 页码: 2127-2133
Authors:  赵有文;  董志远;  孙文荣;  段满龙;  杨子祥;  吕旭如
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半导体/磁体/半导体三层结构的制备方法 专利
专利类型: 发明, 申请日期: 2003-03-12, 公开日期: 2009-06-04, 2009-06-11
Inventors:  杨君玲;  陈诺夫;  何家宏;  钟兴儒;  吴金良;  林兰英;  刘志凯;  杨少延;  柴春林
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提高(100)晶向磷化铟单晶的成晶率和质量的研究 期刊论文
人工晶体学报, 2003, 卷号: 32, 期号: 5, 页码: 460-463
Authors:  赵有文;  段满龙;  孙文荣;  杨子祥;  焦景华;  赵建群;  曹慧梅;  吕旭如
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磁性半导体/半导体异质液相外延生长方法 专利
专利类型: 发明, 申请日期: 2002-05-01, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈诺夫;  杨君玲;  何宏家;  钟兴儒;  吴金良;  林兰英
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Content analyses in GaMnAs by double-crystal X-ray diffraction 期刊论文
CHINESE SCIENCE BULLETIN, 2002, 卷号: 47, 期号: 4, 页码: 274-275
Authors:  Chen NF;  Xiu HX;  Yang JL;  Wu JL;  Zhong XR;  Lin LY;  Chen NF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
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Gamnas  Diluted Magnetic Semiconductor  X-ray Diffraction  Lattice Parameter  Content Of Mn  Semiconductor