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Carbon agent chemical vapor transport growth of Ga2O3 crystal 期刊论文
Journal of Semiconductors, 2016, 卷号: 37, 期号: 10, 页码: 103004
Authors:  Su Jie;  Liu Tong;  Liu Jingming;  Yang Jun;  Shen Guiying;  Bai Yongbiao;  Dong Zhiyuan;  Zhao Youwen
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Analysis of solar cells fabricated from UMG-Si purified by a novel metallurgical method 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 卷号: 28, 期号: 1, 页码: 015024
Authors:  Chen, Teng;  Zhao, Youwen;  Dong, Zhiyuan;  Liu, Tong;  Wang, Jun;  Xie, Hui
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The fabrication of large-area upgraded metallurgical grade multi-crystalline silicon solar cells in a production line 期刊论文
Materials Science Forum, 2013, 卷号: 743-744, 页码: 863-869
Authors:  Chen, Teng;  Zhao, Youwen;  Dong, Zhiyuan;  Wang, Jun;  Liu, Tong;  Xie, Hui
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Purification of metallurgical silicon through directional solidification in a large cold crucible 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 355, 期号: 1, 页码: 145-150
Authors:  Liu T (Liu, Tong);  Dong ZY (Dong, Zhiyuan);  Zhao YW (Zhao, Youwen);  Wang J (Wang, Jun);  Chen T (Chen, Teng);  Xie H (Xie, Hui);  Li J (Li, Jian);  Ni HJ (Ni, Haijiang);  Huo DX (Huo, Dianxin)
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Donor defect in P-diffused bulk ZnO single crystal 会议论文
, Rio de Janeiro, BRAZIL, 2009
Authors:  Zhao YW (Zhao Youwen);  Zhang R (Zhang Rui);  Zhang F (Zhang Fan);  Dong ZY (Dong Zhiyuan);  Yang J (Yang Jun);  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China
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Zinc Oxide  Doping  Defect  
生长半绝缘砷化镓的石英管及在砷化镓中掺碳的方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2009-12-16, 2010-08-12
Inventors:  占 荣;  惠 峰;  赵有文
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非掺半绝缘InP材料的电子辐照缺陷研究 期刊论文
四川大学学报. 自然科学版, 2010, 卷号: 47, 期号: 5, 页码: 1069-1072
Authors:  陈燕;  邓爱红;  赵有文;  张英杰;  余鑫祥;  喻菁;  龙娟娟;  周宇璐;  张丽然
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Residual impurities and electrical properties of undoped LEC InAs single crystals 期刊论文
半导体学报, 2010, 卷号: 31, 期号: 4, 页码: 042001-1-042001-4
Authors:  Hu Weijie;  Zhao Youwen;  Sun Wenrong;  Duan Manlong;  Dong Zhiyuan;  Yang Jun
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InAs单晶衬底的表面形貌和化学成分分析 期刊论文
人工晶体学报, 2010, 卷号: 39, 期号: 4, 页码: 878-882
Authors:  胡炜杰;  赵有文;  段满龙;  王应利;  王俊
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氧化锌体单晶生长过程中的直接掺杂方法 专利
专利类型: 发明, 申请日期: 2009-05-27, 公开日期: 3996
Inventors:  董志远;  赵有文;  杨 俊;  段满龙 
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