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一种制备氮化物单晶衬底的氢化物气相外延装置 专利
专利类型: 发明, 申请日期: 2008-06-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  段瑞飞;  刘喆;  钟兴儒;  魏同波;  马平;  王军喜;  曾一平;  李晋闽
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制造厚膜氮化物材料的氢化物气相外延装置 专利
专利类型: 发明, 申请日期: 2006-12-20, 公开日期: 2009-06-04, 2009-06-11
Inventors:  刘喆;  王军喜;  钟兴儒;  李晋闽;  曾一平;  段瑞飞;  马平;  魏同波;  林郭强
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神舟飞船生长GaMnSb材料过程及性能分析 期刊论文
空间科学学报, 2004, 卷号: 24, 期号: 6, 页码: 455-461
Authors:  张富强;  陈诺夫;  吴金良;  钟兴儒;  林兰英
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半导体/磁体/半导体三层结构的制备方法 专利
专利类型: 发明, 申请日期: 2003-03-12, 公开日期: 2009-06-04, 2009-06-11
Inventors:  杨君玲;  陈诺夫;  何家宏;  钟兴儒;  吴金良;  林兰英;  刘志凯;  杨少延;  柴春林
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磁性半导体/半导体异质液相外延生长方法 专利
专利类型: 发明, 申请日期: 2002-05-01, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈诺夫;  杨君玲;  何宏家;  钟兴儒;  吴金良;  林兰英
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Space grown semi-insulating gallium arsenide single crystal and its application 会议论文
IMPACT OF THE GRAVITY LEVEL ON MATERIALS PROCESSING AND FLUID DYNAMICS, 29 (4), WARSAW, POLAND, JUL, 2000
Authors:  Chen NF;  Zhong XR;  Zhang M;  Lin LY;  Chen NF Acad Sinica Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
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Semiinsulating Gaas  Stoichiometry  Defects  
Space grown semi-insulating gallium arsenide single crystal and its application 期刊论文
IMPACT OF THE GRAVITY LEVEL ON MATERIALS PROCESSING AND FLUID DYNAMICS, 2002, 卷号: 29, 期号: 4, 页码: 537-540
Authors:  Chen NF;  Zhong XR;  Zhang M;  Lin LY;  Chen NF,Acad Sinica,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Semiinsulating Gaas  Stoichiometry  Defects  
Content analyses in GaMnAs by double-crystal X-ray diffraction 期刊论文
CHINESE SCIENCE BULLETIN, 2002, 卷号: 47, 期号: 4, 页码: 274-275
Authors:  Chen NF;  Xiu HX;  Yang JL;  Wu JL;  Zhong XR;  Lin LY;  Chen NF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
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Gamnas  Diluted Magnetic Semiconductor  X-ray Diffraction  Lattice Parameter  Content Of Mn  Semiconductor  
Comparison of field effect transistor characteristics between space-grown and earth-grown gallium arsenide single crystal substrates 期刊论文
APPLIED PHYSICS LETTERS, 2001, 卷号: 78, 期号: 4, 页码: 478-479
Authors:  Chen NF;  Zhong XR;  Lin LY;  Zhang M;  Wang YS;  Bai XW;  Zhao J;  Chen NF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Floating-zone Growth  Zero Gravity  Microgravity  Stoichiometry  Segregation  Silicon  Ge  
Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2001, 卷号: 90, 期号: 4, 页码: 2048-2050
Authors:  Liu HY;  Xu B;  Qian JJ;  Ye XL;  Han Q;  Ding D;  Liang JB;  Zhong XR;  Wang ZG;  Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Laser-diodes  Photoluminescence  Threshold  Emission