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| Robust emergence of a topological Hall effect in MnGa/heavy metal bilayers 期刊论文
PHYSICAL REVIEW B, 2018, 卷号: 97, 期号: 6, 页码: 060407
Authors: K. K. Meng; X. P. Zhao; P. F. Liu; Q. Liu; Y. Wu; Z. P. Li; J. K. Chen; J. Miao; X. G. Xu; J. H. Zhao; Y. Jiang
 Adobe PDF(2698Kb) |  Favorite | View/Download：2/0 | Submit date：2019/11/12 |
| Reversible transition between coherently strained BiFeO3 and the metastable pseudotetragonal phase on (LaAlO3)0.3(Sr2AlTaO6)0.7 (001) 期刊论文
JOURNAL OF APPLIED PHYSICS, 2017, 卷号: 121, 页码: 054102
Authors: Z. Fu; Z. G. Yin; X. W. Zhang; N. F. Chen; Y. J. Zhao; Y. M. Bai; D. Y. Zhao; H. F. Zhang; Y. D. Yuan; Y. N. Chen; J. L. Wu; J. B. You
Adobe PDF(2138Kb) | Favorite | View/Download：43/0 | Submit date：2018/05/30 |
| Temperature dependence of photogalvanic effect in GaAs/AlGaAs two-dimensional electron gas at interband and intersubband excitation 期刊论文
Journal of Applied Physics, 2017, 卷号: 121, 页码: 193901
Authors: X. L. Zeng; J. L. Yu; S. Y. Cheng; Y. F. Lai, Y. H. Chen; W. Huang
Adobe PDF(1345Kb) | Favorite | View/Download：113/2 | Submit date：2018/05/23 |
| Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文
Applied Physics A, 2016, 卷号: 122, 期号: 9
Authors: F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; X. Li; S. T. Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
Adobe PDF(1612Kb) | Favorite | View/Download：133/2 | Submit date：2017/03/10 |
| XPS study of impurities in Si-doped AlN film 期刊论文
Surface and Interface Analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309
Authors: F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
Adobe PDF(360Kb) | Favorite | View/Download：148/4 | Submit date：2017/03/10 |
| The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文
AIP ADVANCES, 2016, 卷号: 6, 页码: 035124
Authors: P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du
Adobe PDF(3219Kb) | Favorite | View/Download：143/3 | Submit date：2017/03/10 |
| Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文
Materials Technology, 2016
Authors: F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. Li; S. T. Liu; H. Yang; L. Q. Zhang; J. P. Liu; Y. T. Zhang; G. T. Du
Adobe PDF(1268Kb) | Favorite | View/Download：281/5 | Submit date：2017/03/10 |
| Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes 期刊论文
Optics Express, 2016, 卷号: 24, 期号: 13, 页码: 13824-13831
Authors: J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; X. J. Li; X. G. He; J. P. Liu; L. Q. Zhang; H. Yang; Y. T. Zhang; G. T. Du
Adobe PDF(3746Kb) | Favorite | View/Download：125/2 | Submit date：2017/03/10 |
| Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 页码: 055709
Authors: J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; H. Yang; Y. T. Zhang; G. T. Du
Adobe PDF(1581Kb) | Favorite | View/Download：388/1 | Submit date：2016/03/23 |
| Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells 期刊论文
Scientific Reports, 2015, 卷号: 5, 页码: 14386
Authors: X. Rong; X. Q. Wang; G. Chen; X. T. Zheng; P. Wang; F. J. Xu; Z. X. Qin; N. Tang; Y. H. Chen; L. W. Sang; M. Sumiya; W. K. Ge; B. Shen
Adobe PDF(1243Kb) | Favorite | View/Download：305/2 | Submit date：2016/03/18 |
