SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Si(111)衬底无微裂GaN的MOCVD生长
张宝顺; 伍墨; 陈俊; 沈晓明; 冯淦; 刘建平; 史永生; 段丽宏; 朱建军; 杨辉
2004
Source Publication半导体学报
Volume25Issue:4Pages:410-414
Abstract采用AlN插入层技术在Si(111)衬底上实现无微裂GaN MOCVD生长.通过对GaN外延层的a,c轴晶格常数的测量,得到了GaN所受张应力与AlN插入层厚度的变化关系.当AlN厚度在7~13nm范围内,GaN所受张应力最小,甚至变为压应力.因此,GaN微裂得以消除.同时研究了AlN插入层对GaN晶体质量的影响,结果表明,许多性能相比于没有AlN插入层的GaN样品有明显提高.
metadata_83中国科学院半导体研究所
Subject Area光电子学
Funding Organization国家自然科学基金,NSFC-RGC联合基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:1601374
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17489
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张宝顺,伍墨,陈俊,等. Si(111)衬底无微裂GaN的MOCVD生长[J]. 半导体学报,2004,25(4):410-414.
APA 张宝顺.,伍墨.,陈俊.,沈晓明.,冯淦.,...&杨辉.(2004).Si(111)衬底无微裂GaN的MOCVD生长.半导体学报,25(4),410-414.
MLA 张宝顺,et al."Si(111)衬底无微裂GaN的MOCVD生长".半导体学报 25.4(2004):410-414.
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