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Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
Authors:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN;  J. J. ZHU;  J. YANG;  W. LIU;  X. G. HE;  X. J. LI;  F. LIANG;  S. T. LIU;  Y. XING;  L. Q. ZHANG;  M. LI;  J. ZHANG
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Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文
Applied Physics A, 2016, 卷号: 122, 期号: 9
Authors:  F. Liang;  P. Chen;  D. G. Zhao;  D. S. Jiang;  Z. J. Zhao;  Z. S. Liu;  J. J. Zhu;  J. Yang;  W. Liu;  X. G. He;  X. J. Li;  X. Li;  S. T. Liu;  H. Yang;  J. P. Liu;  L. Q. Zhang;  Y. T. Zhang;  G. T. Du
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Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC 期刊论文
Chemical Physics Letters, 2016, 卷号: 651, 页码: 76-79
Authors:  F. Liang;  P. Chen;  D.G. Zhao;  D.S. Jiang;  Z.S. Liu;  J.J. Zhu;  J. Yang;  W. Liu;  X.G. He;  X.J. Li;  X. Li;  S.T. Liu;  H. Yang;  L.Q. Zhang;  J.P. Liu;  Y.T. Zhang;  G.T. Du
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The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content 期刊论文
physica status solidi (a), 2016, 卷号: 213, 期号: 8, 页码: 2223–2228
Authors:  X. Li;  D. G. Zhao*;  D. S. Jiang;  P. Chen;  Z. S. Liu;  J. J. Zhu;  J. Yang;  W. Liu;  X. G. He;  X. J. Li;  F. Liang;  L. Q. Zhang;  J. P. Liu;  H. Yang
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XPS study of impurities in Si-doped AlN film 期刊论文
Surface and Interface Analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309
Authors:  F. Liang;  P. Chen;  D. G. Zhao;  D. S. Jiang;  Z. J. Zhao;  Z. S. Liu;  J. J. Zhu;  J. Yang;  L. C. Le;  W. Liu;  X.G. He;  X. J. Li;  X Li;  S. T Liu;  H. Yang;  J. P. Liu;  L. Q. Zhang;  Y. T. Zhang;  G. T. Du
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The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文
AIP ADVANCES, 2016, 卷号: 6, 页码: 035124
Authors:  P. Chen;  D. G. Zhao;  D. S. Jiang;  J. J. Zhu;  Z. S. Liu;  J. Yang;  X. Li;  L. C. Le;  X. G. He;  W. Liu;  X. J. Li;  F. Liang;  B. S. Zhang;  H. Yang;  Y. T. Zhang;  G. T. Du
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Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells 期刊论文
Superlattices and Microstructures, 2016, 卷号: 97, 页码: 186-192
Authors:  X. Li;  D.G. Zhao;  J. Yang;  D.S. Jiang;  Z.S. Liu;  P. Chen;  J.J. Zhu;  W. Liu;  X.G. He;  X.J. Li;  F. Liang;  L.Q. Zhang;  J.P. Liu;  H. Yang;  Y.T. Zhang;  G.T. Du
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Differential resistance of GaN-based laser diodes with and without polarization effect 期刊论文
APPLIED OPTICS, 2015, 卷号: 54, 期号: 29, 页码: 8706-8711
Authors:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN;  J. J. ZHU;  J. YANG;  L. C. LE;  W. LIU;  X. G. HE;  X. J. LI;  F. LIANG;  L. Q. ZHANG;  J. Q. LIU;  H. YANG
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High quality above 3-mu m mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 1, 页码: 017805
Authors:  Xing, JL;  Zhang, Y;  Xu, YQ;  Wang, GW;  Wang, J;  Xiang, W;  Ni, HQ;  Ren, ZW;  He, ZH;  Niu, ZC
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Optical investigation of strong exciton localization in high Al composition AlxGa1-xN alloys 期刊论文
Optics Express, 2013, 卷号: 21, 期号: 21, 页码: 24497–24503
Authors:  Fan S, Qin Z, He C, Hou M, Wang X, Shen B, Li W, Wang W, Mao D, Jin P, Yan J, Dong P.
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