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高压大功率碳化硅IGBT器件研究 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2019
Authors:  温正欣
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Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition 期刊论文
Journal of Crystal Growth, 2019, 卷号: 507, 页码: 283-287
Authors:  X.F. Liu ;   G.G. Yan ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   Y.W. He ;   W.S. Zhao ;   L. Wang ;   M. Guan ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
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Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers 期刊论文
Journal of Crystal Growth, 2019, 卷号: 55, 页码: 1-4
Authors:  G.G. Yan ;   X.F. Liu ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   W.S. Zhao ;   L. Wang ;   F. Zhang ;   X.H. Zhang ;   X.G. Li ;   G.S. Sun ;   Y.P. Zeng ;   Z.G. Wang
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Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2018, 卷号: 504, 页码: 7-12
Authors:  X.F. Liu ;   G.G. Yan ;   B. Liu ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   W.S. Zhao ;   L. Wang ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
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高质量InAs单晶材料的制备及其性质 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 8, 页码: 1391-1395
Authors:  赵有文;  孙文荣;  段满龙;  董志远;  杨子祥;  吕旭如;  王应利
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磷化铟单晶衬底的缺陷控制和高质量表面制备 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 12, 页码: 2127-2133
Authors:  赵有文;  董志远;  孙文荣;  段满龙;  杨子祥;  吕旭如
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磷化铟单晶片的抛光工艺 专利
专利类型: 发明, 申请日期: 2003-03-12, 公开日期: 2009-06-04, 2009-06-11
Inventors:  董宏伟;  赵有文;  杨子祥;  焦景华
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提高(100)晶向磷化铟单晶的成晶率和质量的研究 期刊论文
人工晶体学报, 2003, 卷号: 32, 期号: 5, 页码: 460-463
Authors:  赵有文;  段满龙;  孙文荣;  杨子祥;  焦景华;  赵建群;  曹慧梅;  吕旭如
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氢化非晶氧化硅薄膜光致发光起源的探讨 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 2, 页码: 162
Authors:  马智训;  廖显伯;  何杰;  程文超;  岳国珍;  王永谦;  刁宏伟;  孔光临
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SiOx:H(O 期刊论文
物理学报, 1998, 卷号: 47, 期号: 6, 页码: 1033
Authors:  马智训;  廖显伯;  何杰;  程文超;  岳国珍;  王永谦;  刁宏伟;  孔光临
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