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Scattering due to large cluster embedded in quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 5, 页码: 052105
Authors:  Liu, Changbo;  Zhao, Guijuan;  Liu, Guipeng;  Song, Yafeng;  Zhang, Heng;  Jin, Dongdong;  Li, Zhiwei;  Liu, Xianglin;  Yang, Shaoyan;  Zhu, Qinsheng;  Wang, Zhanguo
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X-ray probe of GaN thin films grown on InGaN compliant substrates 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 13, 页码: 132104
Authors:  Xu, Xiaoqing;  Li, Yang;  Liu, Jianming;  Wei, Hongyuan;  Liu, Xianglin;  Yang, Shaoyan;  Wang, Zhanguo;  Wang, Huanhua
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Control of epitaxial relationships of ZnO/SrTiO3 heterointerfaces by etching the substrate surface 期刊论文
Authors:  Jia, Caihong;  Chen, Yonghai;  Liu, Xianglin;  Yang, Shaoyan;  Zhang, Weifeng;  Wang, Zhanguo
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Numerical study of radial temperature distribution in the AlN sublimation growth system 期刊论文
CRYSTAL RESEARCH AND TECHNOLOGY, 2013, 卷号: 48, 期号: 5, 页码: 321-327
Authors:  Li, Huijie;  Liu, Xianglin;  Feng, Yuxia;  Wei, Hongyuan;  Yang, Shaoyan
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Two dimensional electron gas mobility limited by scattering of quantum dots with indium composition transition region in quantum wells 期刊论文
Physica E: Low-dimensional Systems and Nanostructures, 2013, 卷号: 52, 页码: 150–154
Authors:  Liu, Changbo;  Yang, Shaoyan;  Shi, Kai;  Liu, Guipeng;  Zhang, Heng;  Jin, Dongdong;  Gu, Chengyan;  Zhao, Guijuan;  Sang, Ling;  Liu, Xianglin;  Zhu, Qinsheng;  Wang, Zhanguo
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Calculation of discrepancies in measured valence band offsets of heterojunctions with different crystal polarities 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 11, 页码: 113712
Authors:  Li HJ (Li, Huijie);  Liu XL (Liu, Xianglin);  Wang JX (Wang, Jianxia);  Jin DD (Jin, Dongdong);  Zhang H (Zhang, Heng);  Yang SY (Yang, Shaoyan);  Liu SM (Liu, Shuman);  Mao W (Mao, Wei);  Hao Y (Hao, Yue);  Zhu QS (Zhu, QinSheng);  Wang ZG (Wang, Zhanguo)
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Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures 期刊论文
Applied Physics Letters, 2012, 卷号: 100, 期号: 8, 页码: 082101
Authors:  Liu, Guipeng;  Wu, Ju;  Zhao, Guijuan;  Liu, Shuman;  Mao, Wei;  Hao, Yue;  Liu, Changbo;  Yang, Shaoyan;  Liu, Xianglin;  Zhu, Qinsheng;  Wang, Zhanguo
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Design of a three-layer hot-wall horizontal flow MOCVD reactor 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 9, 页码: 093005
Authors:  Gu, Chengyan;  Lee, Chengming;  Liu, Xianglin
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A Theoretical Calculation of the Impact of GaN Cap and Al(x)Ga(1-x)N Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/Al(x)Ga(1-x)N/GaN Heterostructure 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 卷号: 58, 期号: 12, 页码: 4272-4275
Authors:  Liu GP (Liu Guipeng);  Wu J (Wu Ju);  Lu YW (Lu Yanwu);  Zhang BA (Zhang Biao);  Li CM (Li Chengming);  Sang L (Sang Ling);  Song YF (Song Yafeng);  Shi K (Shi Kai);  Liu XL (Liu Xianglin);  Yang SY (Yang Shaoyan);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang Zhanguo)
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Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy 期刊论文
Nanoscale Research Letters, 2011, 卷号: 6, 页码: 1-4
Authors:  Li, Zhiwei;  Zhang, Biao;  Wang, Jun;  Liu, Jianming;  Liu, Xianglin;  Yang, Shaoyan;  Zhu, Qinsheng;  Wang, Zhanguo;  Li, Z.(
Adobe PDF(237Kb)  |  Favorite  |  View/Download:1198/361  |  Submit date:2012/06/14
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