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Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 卷号: 215, 期号: 23, 页码: 1800455
Authors:  Meng Yulin;  Wang Lianshan;  Zhao Guijuan;  Li Fangzheng;  Li Huijie;  Yang Shaoyan;  Wang Zhanguo
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The Residual Stress and Al Incorporation of AlGaN Epilayers by Metalorganic Chemical Vapor Deposition 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7484-7488
Authors:  Li Fangzheng;  Wang Lianshan;  Zhao Guijuan;  Meng Yulin;  Li Huijie;  Chen Yanan;  Yang Shaoyan;  Jin Peng;  Wang Zhanguo
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Comparative Investigation of Semipolar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7446-7450
Authors:  Wang Lianshan;  Zhao Guijuan;  Meng Yulin;  Li Huijie;  Yang Shaoyan;  Wang Zhanguo
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Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors 期刊论文
Applied Physics Letters, 2013, 卷号: 103, 期号: 23, 页码: 232109
Authors:  Li, Huijie;  Liu, Guipeng;  Wei, Hongyuan;  Jiao, Chunmei;  Wang, Jianxia;  Zhang, Heng;  Dong Jin, Dong;  Feng, Yuxia;  Yang, Shaoyan;  Wang, Lianshan;  Zhu, Qinsheng;  Wang, Zhan-Guo
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N型GaN的持续光电导 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 5, 页码: 371
Authors:  汪连山;  刘祥林;  岳国珍;  王晓晖;  汪度;  陆大成;  王占国
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掺硅氮化镓材料的MOVPE生长及其性质研究 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 7, 页码: 534
Authors:  刘祥林;  汪连山;  陆大成;  汪度;  王晓晖;  林兰英
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氮化镓缓冲层生长过程分析 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 7, 页码: 529
Authors:  刘祥林;  汪连山;  陆大成;  王晓晖;  汪度;  林兰英
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氮化镓缓冲层的物理性质 期刊论文
半导体学报, 1999, 卷号: 633, 期号: 0
Authors:  刘祥林;  汪连山;  陆大成;  王晓晖;  汪度;  林兰英
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氮化镓材料的外延生长及性质研究 学位论文
, 北京: 中国科学院半导体研究所, 1998
Authors:  汪连山
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Al_2O_3/Si(001)衬底上GaN外延薄膜的制备 期刊论文
中国科学. E辑,技术科学, 1998, 卷号: 28, 期号: 1, 页码: 32
Authors:  汪连山;  刘祥林;  昝育德;  汪度;  王俊;  陆大成;  王占国
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