SEMI OpenIR
(Note: the search results are based on claimed items)

Browse/Search Results:  1-10 of 20 Help

Filters            
Selected(0)Clear Items/Page:    Sort:
Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 2, 页码: Article no.27801
Authors:  Yang XR;  Xu B;  Wang HF;  Zhao GQ;  Shi SH;  Shen XZ;  Li JF;  Wang ZG;  Yang, XR, Handan Coll, Dept Phys & Elect Engn, Handan 056005, Peoples R China. yangxr1976@126.com
Adobe PDF(483Kb)  |  Favorite  |  View/Download:1447/327  |  Submit date:2011/07/05
Continuous-wave Operation  Emission  Lasers  Wavelength  Excitons  Energy  
Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer 期刊论文
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 卷号: 153, 期号: 7, 页码: G703-G706
Authors:  Sun J;  Jin P;  Zhao C;  Yu LK;  Ye XL;  Xu B;  Chen YH;  Wang ZG;  Sun, J, Lund Univ, SE-22100 Lund, Sweden. E-mail: albertjefferson@sohu.com
Adobe PDF(183Kb)  |  Favorite  |  View/Download:1184/444  |  Submit date:2010/04/11
Gaas  Spectroscopy  Parameters  Transport  Lasers  Energy  States  Hole  
Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots 期刊论文
SOLID STATE COMMUNICATIONS, 2006, 卷号: 137, 期号: 11, 页码: 606-610
Authors:  Lei W;  Chen YH;  Xu B;  Jin P;  Wang YL;  Zhao C;  Wang ZG;  Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: ahleiwen@red.semi.ac.cn
Adobe PDF(349Kb)  |  Favorite  |  View/Download:1032/353  |  Submit date:2010/04/11
Nanostructures  Semiconductors  Optical Properties  Luminescence  Wavelength  Nanostructures  Interband  Lasers  
Room-temperature observation of electron resonant tunneling through InAs/AlAs quantum dots 期刊论文
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2006, 卷号: 9, 期号: 5, 页码: G167-G170
Authors:  Sun J;  Li RY;  Zhao C;  Yu LK;  Ye XL;  Xu B;  Chen YH;  Wang ZG;  Sun, J, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail: albertjefferson@sohu.com
Adobe PDF(175Kb)  |  Favorite  |  View/Download:1026/362  |  Submit date:2010/04/11
Semiconductor-devices  Transport  States  Bistability  Voltage  Lasers  Diode  
Interband and intraband photocurrent of self-assembled InAs/InAlAs/InP nanostructures 期刊论文
NANOTECHNOLOGY, 2005, 卷号: 16, 期号: 12, 页码: 2785-2789
Authors:  Lei W;  Chen YH;  Xu B;  Jin P;  Zhao C;  Yu LK;  Wang ZG;  Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: ahleiwen@red.semi.ac.cn
Adobe PDF(294Kb)  |  Favorite  |  View/Download:885/262  |  Submit date:2010/04/11
Dot Infrared Photodetectors  Inas/gaas Quantum Dots  Room-temperature  Spectroscopy  Photoconductivity  Heterostructures  Transitions  Lasers  Wells  Inp  
Size evolution and optical properties of self-assembled InAs quantum dots on different matrix 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 卷号: 19, 期号: 3, 页码: 292-297
Authors:  He J;  Xu B;  Wang ZG;  Qu SC;  Liu FQ;  Zhu TW;  He J,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(247Kb)  |  Favorite  |  View/Download:842/233  |  Submit date:2010/08/12
Self-assembled  Mbe  Quantum Dots  Photoluminescence  1.3 Mu-m  Temperature-dependence  Excited-states  Inxga1-xas  Lasers  Inp  
Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 241, 期号: 3, 页码: 304-308
Authors:  Zhang ZY;  Xu B;  Jin P;  Meng XQ;  Li CM;  Ye XL;  Li DB;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(142Kb)  |  Favorite  |  View/Download:869/340  |  Submit date:2010/08/12
Atomic Force Microscopy  Low Dimensional Structures  Nanostructures  Molecular Beam Epitaxy  Semiconducting Iii-v Materials  Laser Diodes  Temperature-dependence  Threshold Current  Mu-m  Lasers  
Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 240, 期号: 3-4, 页码: 395-400
Authors:  He J;  Xu B;  Wang ZG;  Qu SC;  Liu FQ;  Zhu TW;  Ye XL;  Zhao FA;  Meng XQ;  He J,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(175Kb)  |  Favorite  |  View/Download:1036/309  |  Submit date:2010/08/12
Photoluminescence  Molecular Beam Epitaxy  Nanomaterials  Quantum Dots  Semiconducting Iii-v Materials  1.3 Mu-m  Temperature-dependence  Excited-states  Inxga1-xas  Growth  Lasers  Inp  
Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer 期刊论文
JOURNAL OF APPLIED PHYSICS, 2002, 卷号: 92, 期号: 1, 页码: 511-514
Authors:  Zhang ZY;  Xu B;  Jin P;  Meng XQ;  Li CM;  Ye XL;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(170Kb)  |  Favorite  |  View/Download:1006/286  |  Submit date:2010/08/12
Molecular-beam Epitaxy  1.3 Mu-m  Temperature-dependence  Growth  Gaas  Lasers  
Structure and photoluminescence of InGaAs quantum dots formed on an InAlAs wetting layer 期刊论文
CHINESE PHYSICS LETTERS, 2001, 卷号: 18, 期号: 10, 页码: 1411-1414
Authors:  Zhang YC;  Huang CJ;  Ye XL;  Xu B;  Ding D;  Wang JZ;  Li YF;  Liu FQ;  Wang ZG;  Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(395Kb)  |  Favorite  |  View/Download:1062/456  |  Submit date:2010/08/12
Temperature-dependence  Carrier Transfer  Lasers  Gain