SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer
Zhang ZY; Xu B; Jin P; Meng XQ; Li CM; Ye XL; Wang ZG; Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
2002
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume92Issue:1Pages:511-514
AbstractWe have fabricated a quantum dot (QD) structure for long-wavelength temperature-insensitive semiconductor laser by introducing a combined InAlAs and InGaAs overgrowth layer on InAs/GaAs QDs. We found that QDs formed on GaAs (100) substrate by InAs deposition followed by the InAlAs and InGaAs combination layer demonstrate two effects: one is the photoluminescence peak redshift towards 1.35 mum at room temperature, the other is that the energy separation between the ground and first excited states can be up to 103 meV. These results are attributed to the fact that InAs/GaAs intermixing caused by In segregation at substrate temperature of 520 degreesC can be considerably suppressed by the thin InAlAs layer and the strain in the quantum dots can be reduced by the combined InAlAs and InGaAs layer. (C) 2002 American Institute of Physics.
metadata_83chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordMolecular-beam Epitaxy 1.3 Mu-m Temperature-dependence Growth Gaas Lasers
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11872
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorZhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Zhang ZY,Xu B,Jin P,et al. Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer[J]. JOURNAL OF APPLIED PHYSICS,2002,92(1):511-514.
APA Zhang ZY.,Xu B.,Jin P.,Meng XQ.,Li CM.,...&Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China..(2002).Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer.JOURNAL OF APPLIED PHYSICS,92(1),511-514.
MLA Zhang ZY,et al."Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer".JOURNAL OF APPLIED PHYSICS 92.1(2002):511-514.
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