SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer
Sun J; Jin P; Zhao C; Yu LK; Ye XL; Xu B; Chen YH; Wang ZG; Sun, J, Lund Univ, SE-22100 Lund, Sweden. E-mail: albertjefferson@sohu.com
2006
Source PublicationJOURNAL OF THE ELECTROCHEMICAL SOCIETY
ISSN0013-4651
Volume153Issue:7Pages:G703-G706
AbstractMolecular beam epitaxy was employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal current was effectively reduced and electron resonant tunneling through quantum dots under both forward and reverse biased conditions was observed at relatively high temperature of 77 K. The ground states of quantum dots were found to be at similar to 0.19 eV below the conduction band of GaAs matrix. The theoretical computations were in conformity with experimental data. (c) 2006 The Electrochemical Society.
metadata_83chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordGaas Spectroscopy Parameters Transport Lasers Energy States Hole
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-04-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/10638
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorSun, J, Lund Univ, SE-22100 Lund, Sweden. E-mail: albertjefferson@sohu.com
Recommended Citation
GB/T 7714
Sun J,Jin P,Zhao C,et al. Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2006,153(7):G703-G706.
APA Sun J.,Jin P.,Zhao C.,Yu LK.,Ye XL.,...&Sun, J, Lund Univ, SE-22100 Lund, Sweden. E-mail: albertjefferson@sohu.com.(2006).Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,153(7),G703-G706.
MLA Sun J,et al."Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153.7(2006):G703-G706.
Files in This Item:
File Name/Size DocType Version Access License
3275.pdf(183KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Sun J]'s Articles
[Jin P]'s Articles
[Zhao C]'s Articles
Baidu academic
Similar articles in Baidu academic
[Sun J]'s Articles
[Jin P]'s Articles
[Zhao C]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Sun J]'s Articles
[Jin P]'s Articles
[Zhao C]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.