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Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
Authors:  Sun ZZ;  Liu FQ;  Wu J;  Ye XL;  Ding D;  Xu B;  Liang JB;  Wang ZG;  Sun ZZ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
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Self-assembled Quantum Dots  Inp Substrate  High Index  Mbe  In(Ga  Molecular-beam-epitaxy  Al)as/inAlas/inp  Vapor-phase Epitaxy  Gaas  Islands  Photoluminescence  Inp(001)  Growth  Lasers  
Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 1, 页码: 533-536
Authors:  Sun S;  Wu J;  Liu FQ;  Zu HZ;  Chen YH;  Ye XL;  Jiang WH;  Xu B;  Wang ZG;  Sun S,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Inas Islands  Inp(001)  Growth  Gaas  Semiconductors  Thickness  Lasers  Ingaas  Size  
Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 9, 页码: 5433-5436
Authors:  Liu HY;  Xu B;  Chen YH;  Ding D;  Wang ZG;  Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Inas Islands  Growth  Gaas  Relaxation  Evolution  Gaas(100)  Thickness  Density  Size  
The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53Ga0.47As multilayer on InP substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 212, 期号: 1-2, 页码: 360-363
Authors:  Sun ZZ;  Wu J;  Lin F;  Liu FQ;  Chen YH;  Ye XL;  Jiang WH;  Li YF;  Xu B;  Wang ZG;  Sun ZZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Self-organized Quantum Dots  Inas/in0.53ga0.47as Multilayer  Inp Substrate  Mbe  Molecular-beam-epitaxy  Inas Islands  Growth  Matrix  Gaas  
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 期刊论文
PHYSICA E, 2000, 卷号: 8, 期号: 2, 页码: 164-169
Authors:  Sun ZZ;  Liu FQ;  Wu J;  Ye XL;  Ding D;  Xu B;  Liang JB;  Wang ZG;  Sun ZZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(192Kb)  |  Favorite  |  View/Download:862/264  |  Submit date:2010/08/12
Self-assembled Quantum Dots  Inp Substrate  High Index  Mbe  In(Ga  Molecular-beam-epitaxy  Al)as/inAlas/inp  Vapor-phase Epitaxy  Gaas  Islands  Photoluminescence  Inp(001)  Growth  Lasers