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Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 1, 页码: 533-536
Authors:  Sun S;  Wu J;  Liu FQ;  Zu HZ;  Chen YH;  Ye XL;  Jiang WH;  Xu B;  Wang ZG;  Sun S,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(152Kb)  |  Favorite  |  View/Download:788/247  |  Submit date:2010/08/12
Molecular-beam Epitaxy  Inas Islands  Inp(001)  Growth  Gaas  Semiconductors  Thickness  Lasers  Ingaas  Size  
反应离子刻蚀工艺仿真模型的研究 期刊论文
功能材料与器件学报, 2000, 卷号: 6, 期号: 4, 页码: 420
Authors:  陆建祖;  魏红振;  李玉鉴;  张永刚;  林世鸣;  余金中;  刘忠立
Adobe PDF(358Kb)  |  Favorite  |  View/Download:826/268  |  Submit date:2010/11/23