SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate
Sun S; Wu J; Liu FQ; Zu HZ; Chen YH; Ye XL; Jiang WH; Xu B; Wang ZG; Sun S,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
2000
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume88Issue:1Pages:533-536
AbstractSelf-assembled In0.9Ga0.1As, In0.9Al0.1As, and InAs quantum dots (QD) were fabricated in an InAlAs matrix lattice-matched to an InP substrate by molecular beam epitaxy. Preliminary characterizations were performed using transmission electron microscopy, photoluminescence, and reflection high-energy electron diffraction. Experimental results reveal clear differences in QD formation, size distribution, and luminescence between the InAs and In-0.9(Ga/Al)(0.1)As samples, which show the potential of introducing ternary compositions to adjust the structural and optical properties of QDs on an InP substrate. (C) 2000 American Institute of Physics. [S0021-8979(00)10213-0].
metadata_83chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
KeywordMolecular-beam Epitaxy Inas Islands Inp(001) Growth Gaas Semiconductors Thickness Lasers Ingaas Size
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/12540
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorSun S,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Sun S,Wu J,Liu FQ,et al. Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate[J]. JOURNAL OF APPLIED PHYSICS,2000,88(1):533-536.
APA Sun S.,Wu J.,Liu FQ.,Zu HZ.,Chen YH.,...&Sun S,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China..(2000).Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate.JOURNAL OF APPLIED PHYSICS,88(1),533-536.
MLA Sun S,et al."Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate".JOURNAL OF APPLIED PHYSICS 88.1(2000):533-536.
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