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Design of high brightness cubic-GaN LEDs grown on GaAs substrate 期刊论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 卷号: 42, 期号: 0, 页码: S753-S756
Authors:  Sun YP;  Shen XM;  Zhang ZH;  Zhao DG;  Feng ZH;  Fu Y;  Zhang SN;  Yang H;  Sun YP,Chinese Acad Sci,State Key Lab Integrated Optoelect,Inst Semicond,Beijing 100083,Peoples R China.
Adobe PDF(1909Kb)  |  Favorite  |  View/Download:780/189  |  Submit date:2010/08/12
Wafer Bunding  Cubic Gan  Light-emitting-diodes  Field-effect Transistor  Single-crystal Gan  Microwave Performance  Mirror  Junction  
Epitaxial lateral overgrowth of cubic GaN by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 225, 期号: 1, 页码: 45-49
Authors:  Fu Y;  Yang H;  Zhao DG;  Zheng XH;  Li SF;  Sun YP;  Feng ZH;  Wang YT;  Duan LH;  Fu Y,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Adobe PDF(175Kb)  |  Favorite  |  View/Download:1218/437  |  Submit date:2010/08/12
Photoluminescence  Sem  Epitaxial Lateral Overgrowth  Metalorganic Chemical Vapor Deposition  Cubic Gan  Phase Epitaxy  Selective Growth  Laser-diodes  Layers  
Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 2000, 卷号: 29, 期号: 2, 页码: 177-182
Authors:  Xu DP;  Yang H;  Li JB;  Li SF;  Wang YT;  Zhao DG;  Wu RH;  Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100864,Peoples R China.
Adobe PDF(1465Kb)  |  Favorite  |  View/Download:773/193  |  Submit date:2010/08/12
Cubic Gan  Hexagonal Gan  Buffer Layer  Afm  Rheed  Cubic Gan  Films  Gaas  Dependence  Nitride  Layers  
Pulsed excimer laser annealing of Mg-doped cubic GaN 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 209, 期号: 1, 页码: 203-207
Authors:  Xu DP;  Yang H;  Li SF;  Zhao DG;  Ge H;  Wu RH;  Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(136Kb)  |  Favorite  |  View/Download:933/356  |  Submit date:2010/08/12
Annealing  Cubic Gan  Mg Doping  Photoluminescence  Molecular-beam Epitaxy  Iii-v Nitride  P-type Gan  Optical-properties  Compensation  Diodes  Films  
Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition 期刊论文
THIN SOLID FILMS, 2000, 卷号: 368, 期号: 2, 页码: 279-282
Authors:  Xu DP;  Yang H;  Li JB;  Li SF;  Zhao DG;  Wang YT;  Sun XL;  Wu RH;  Xu DP,Chinese Acad Sci,Natl Res Ctr Optoelect Technol,Inst Semicond,Beijing 100864,Peoples R China.
Adobe PDF(194Kb)  |  Favorite  |  View/Download:932/263  |  Submit date:2010/08/12
Cubic Gan  Buffer Layer  Atomic Force Microscopy  Reflection High-energy Electron Diffraction  Movpe