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Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 6, 页码: 3762-3764
Authors:  Xu DP;  Wang YT;  Yang H;  Li SF;  Zhao DG;  Fu Y;  Zhang SM;  Wu RH;  Jia QJ;  Zheng WL;  Jiang XM;  Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Nitride Semiconductors  Stress  
The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition 会议论文
THIN SOLID FILMS, 368 (2), SHANGHAI, PEOPLES R CHINA, MAY 10-13, 1999
Authors:  Sun XL;  Wang YY;  Yang H;  Li JB;  Zheng LX;  Xu DP;  Wang ZG;  Sun XL Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol Beijing 100083 Peoples R China.
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Metalorganic Chemical Vapor Deposition  Cubic Gan  Hexagonal Phase Content  4-circle X-ray Double Crystal Diffraction  Molecular-beam Epitaxy  Gallium Nitride  Thin-films  Silicon  Gaas  
Room-temperature optical transitions in Mg-doped cubic GaN/GaAs(100) grown by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 87, 期号: 4, 页码: 2064-2066
Authors:  Xu DP;  Yang H;  Zhao DG;  Li SF;  Wu RH;  Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Gallium Nitride  Gan Films  
Pulsed excimer laser annealing of Mg-doped cubic GaN 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 209, 期号: 1, 页码: 203-207
Authors:  Xu DP;  Yang H;  Li SF;  Zhao DG;  Ge H;  Wu RH;  Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(136Kb)  |  Favorite  |  View/Download:960/356  |  Submit date:2010/08/12
Annealing  Cubic Gan  Mg Doping  Photoluminescence  Molecular-beam Epitaxy  Iii-v Nitride  P-type Gan  Optical-properties  Compensation  Diodes  Films  
The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition 期刊论文
THIN SOLID FILMS, 2000, 卷号: 368, 期号: 2, 页码: 237-240
Authors:  Sun XL;  Wang YY;  Yang H;  Li JB;  Zheng LX;  Xu DP;  Wang ZG;  Sun XL,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(206Kb)  |  Favorite  |  View/Download:961/364  |  Submit date:2010/08/12
Metalorganic Chemical Vapor Deposition  Cubic Gan  Hexagonal Phase Content  4-circle X-ray Double Crystal Diffraction  Molecular-beam Epitaxy  Gallium Nitride  Thin-films  Silicon  Gaas  
Strain and photoluminescence characterization of cubic (In,Ga)N films grown on GaAs(001) substrates 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 87, 期号: 8, 页码: 3711-3714
Authors:  Sun XL;  Wang YT;  Yang H;  Zheng LX;  Xu DP;  Li JB;  Wang ZG;  Sun XL,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
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Phase-separation  Gan  
Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(001) substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 212, 期号: 3-4, 页码: 397-401
Authors:  Sun XL;  Yang H;  Wang YT;  Zheng LX;  Xu DP;  Zhao DG;  Li SF;  Wang ZG;  Sun XL,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
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Iii-v Semiconductor Mocvd Rheed  Xrdcd  Sapphire  
Cubic InGaN grown by MOCVD 期刊论文
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 卷号: 4, 期号: 0, 页码: Art.No.G3.25
Authors:  Li JB;  Yang H;  Zheng LX;  Xu DP;  Wang YT;  Li JB,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Gallium Nitride  Gan  Gaas  
Effect of Si doping on cubic GaN films grown on GaAs(100) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 206, 期号: 1-2, 页码: 150-154
Authors:  Xu DP;  Yang H;  Li JB;  Li SF;  Wang YT;  Zhao DG;  Wu RH;  Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(118Kb)  |  Favorite  |  View/Download:985/284  |  Submit date:2010/08/12
Gan  Cubic  Hexagonal  Photoluminescence  Doped Gan  Xrd  Silicon  Light-emitting Diodes  Semiconductors  Sapphire  
Scanning electron microscope studies of cubic AlxGa1-xN films grown on GaAs(100) by metal organic vapor phase epitaxy (MOVPE) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 203, 期号: 1-2, 页码: 40-44
Authors:  Xu DP;  Yang H;  Zhao DG;  Li JB;  Zheng LX;  Wang YT;  Li SF;  Duan LH;  Wu RH;  Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(881Kb)  |  Favorite  |  View/Download:1063/279  |  Submit date:2010/08/12
Algan  Cubic  Hexagonal  Sem  Gaas  Movpe  Gan