×
验证码:
换一张
Forgotten Password?
Stay signed in
×
Log In
Chinese
|
English
中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
Log In
Register
ALL
ORCID
Title
Creator
Subject Area
Keyword
Document Type
Source Publication
Indexed By
Publisher
Date Issued
Date Accessioned
Funding Project
MOST Discipline Catalogue
Study Hall
Image search
Paste the image URL
Home
Collections
Authors
DocType
Subjects
K-Map
News
Search in the results
Collection
中国科学院半导体研... [14]
Authors
赵德刚 [7]
江德生 [1]
张书明 [1]
李京波 [1]
Document Type
Journal a... [13]
Conference... [1]
Date Issued
2000 [7]
1999 [6]
1998 [1]
Language
英语 [14]
Source Publication
JOURNAL OF... [5]
JOURNAL OF... [3]
APPLIED PH... [2]
MRS INTERN... [1]
SCIENCE IN... [1]
THIN SOLID... [1]
More...
Funding Project
Indexed By
SCI [13]
CPCI-S [1]
Funding Organization
Chinese Va... [1]
×
Knowledge Map
SEMI OpenIR
Start a Submission
Submissions
Unclaimed
Claimed
Attach Fulltext
Bookmarks
QQ
Weibo
Feedback
Browse/Search Results:
1-10 of 14
Help
Selected(
0
)
Clear
Items/Page:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
Sort:
Select
Title Ascending
Title Descending
Author Ascending
Author Descending
Issue Date Ascending
Issue Date Descending
WOS Cited Times Ascending
WOS Cited Times Descending
Submit date Ascending
Submit date Descending
Journal Impact Factor Ascending
Journal Impact Factor Descending
Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition
期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 6, 页码: 3762-3764
Authors:
Xu DP
;
Wang YT
;
Yang H
;
Li SF
;
Zhao DG
;
Fu Y
;
Zhang SM
;
Wu RH
;
Jia QJ
;
Zheng WL
;
Jiang XM
;
Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(45Kb)
  |  
Favorite
  |  
View/Download:1099/331
  |  
Submit date:2010/08/12
Molecular-beam Epitaxy
Nitride Semiconductors
Stress
The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition
会议论文
THIN SOLID FILMS, 368 (2), SHANGHAI, PEOPLES R CHINA, MAY 10-13, 1999
Authors:
Sun XL
;
Wang YY
;
Yang H
;
Li JB
;
Zheng LX
;
Xu DP
;
Wang ZG
;
Sun XL Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol Beijing 100083 Peoples R China.
Adobe PDF(206Kb)
  |  
Favorite
  |  
View/Download:1175/311
  |  
Submit date:2010/11/15
Metalorganic Chemical Vapor Deposition
Cubic Gan
Hexagonal Phase Content
4-circle X-ray Double Crystal Diffraction
Molecular-beam Epitaxy
Gallium Nitride
Thin-films
Silicon
Gaas
Room-temperature optical transitions in Mg-doped cubic GaN/GaAs(100) grown by metalorganic chemical vapor deposition
期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 87, 期号: 4, 页码: 2064-2066
Authors:
Xu DP
;
Yang H
;
Zhao DG
;
Li SF
;
Wu RH
;
Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(51Kb)
  |  
Favorite
  |  
View/Download:852/279
  |  
Submit date:2010/08/12
Molecular-beam Epitaxy
Gallium Nitride
Gan Films
Pulsed excimer laser annealing of Mg-doped cubic GaN
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 209, 期号: 1, 页码: 203-207
Authors:
Xu DP
;
Yang H
;
Li SF
;
Zhao DG
;
Ge H
;
Wu RH
;
Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(136Kb)
  |  
Favorite
  |  
View/Download:976/356
  |  
Submit date:2010/08/12
Annealing
Cubic Gan
Mg Doping
Photoluminescence
Molecular-beam Epitaxy
Iii-v Nitride
P-type Gan
Optical-properties
Compensation
Diodes
Films
The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition
期刊论文
THIN SOLID FILMS, 2000, 卷号: 368, 期号: 2, 页码: 237-240
Authors:
Sun XL
;
Wang YY
;
Yang H
;
Li JB
;
Zheng LX
;
Xu DP
;
Wang ZG
;
Sun XL,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(206Kb)
  |  
Favorite
  |  
View/Download:978/364
  |  
Submit date:2010/08/12
Metalorganic Chemical Vapor Deposition
Cubic Gan
Hexagonal Phase Content
4-circle X-ray Double Crystal Diffraction
Molecular-beam Epitaxy
Gallium Nitride
Thin-films
Silicon
Gaas
Strain and photoluminescence characterization of cubic (In,Ga)N films grown on GaAs(001) substrates
期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 87, 期号: 8, 页码: 3711-3714
Authors:
Sun XL
;
Wang YT
;
Yang H
;
Zheng LX
;
Xu DP
;
Li JB
;
Wang ZG
;
Sun XL,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(69Kb)
  |  
Favorite
  |  
View/Download:1022/251
  |  
Submit date:2010/08/12
Phase-separation
Gan
Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(001) substrates
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 212, 期号: 3-4, 页码: 397-401
Authors:
Sun XL
;
Yang H
;
Wang YT
;
Zheng LX
;
Xu DP
;
Zhao DG
;
Li SF
;
Wang ZG
;
Sun XL,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(385Kb)
  |  
Favorite
  |  
View/Download:1049/284
  |  
Submit date:2010/08/12
Iii-v Semiconductor Mocvd Rheed
Xrdcd
Sapphire
Cubic InGaN grown by MOCVD
期刊论文
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 卷号: 4, 期号: 0, 页码: Art.No.G3.25
Authors:
Li JB
;
Yang H
;
Zheng LX
;
Xu DP
;
Wang YT
;
Li JB,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Favorite
  |  
View/Download:597/0
  |  
Submit date:2010/08/12
Molecular-beam Epitaxy
Gallium Nitride
Gan
Gaas
Effect of Si doping on cubic GaN films grown on GaAs(100)
期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 206, 期号: 1-2, 页码: 150-154
Authors:
Xu DP
;
Yang H
;
Li JB
;
Li SF
;
Wang YT
;
Zhao DG
;
Wu RH
;
Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(118Kb)
  |  
Favorite
  |  
View/Download:1003/284
  |  
Submit date:2010/08/12
Gan
Cubic
Hexagonal
Photoluminescence
Doped Gan
Xrd
Silicon
Light-emitting Diodes
Semiconductors
Sapphire
Scanning electron microscope studies of cubic AlxGa1-xN films grown on GaAs(100) by metal organic vapor phase epitaxy (MOVPE)
期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 203, 期号: 1-2, 页码: 40-44
Authors:
Xu DP
;
Yang H
;
Zhao DG
;
Li JB
;
Zheng LX
;
Wang YT
;
Li SF
;
Duan LH
;
Wu RH
;
Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(881Kb)
  |  
Favorite
  |  
View/Download:1076/279
  |  
Submit date:2010/08/12
Algan
Cubic
Hexagonal
Sem
Gaas
Movpe
Gan