SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition
Xu DP; Yang H; Li JB; Li SF; Wang YT; Zhao DG; Wu RH; Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100864,Peoples R China.
2000
Source PublicationJOURNAL OF ELECTRONIC MATERIALS
ISSN0361-5235
Volume29Issue:2Pages:177-182
AbstractWe have investigated the growth of GaN buffers by metalorganic chemical vapor deposition (MOCVD) on GaAs (100) substrates. Atomic force microscope (AFM) and reflection high-energy electron diffraction (RHEED) were employed to study the dependence of the nucleation on the growth temperature, growth rate, annealing effect, and growth time. A two-step growth sequence must be used to optimize and control the nucleation and the subsequent growth independently. The size and distribution of islands and the thickness of buffer layers have a crucial role on the quality of GaN layers. Based on the experimental results, a model was given to interpret the formation of hexagonal-phase GaN in the cubic-phase GaN layers. Using an optimum buffer layer, the strong near-band emission of cubic GaN with full-width at half maximum (FWHM) value as small as 5.6 nm was observed at room temperature. The background carrier concentration was estimated to be in the range of 10(13) similar to 10(14) cm(-3).
metadata_83chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100864, peoples r china
KeywordCubic Gan Hexagonal Gan Buffer Layer Afm Rheed Cubic Gan Films Gaas Dependence Nitride Layers
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/12702
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorXu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100864,Peoples R China.
Recommended Citation
GB/T 7714
Xu DP,Yang H,Li JB,et al. Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition[J]. JOURNAL OF ELECTRONIC MATERIALS,2000,29(2):177-182.
APA Xu DP.,Yang H.,Li JB.,Li SF.,Wang YT.,...&Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100864,Peoples R China..(2000).Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition.JOURNAL OF ELECTRONIC MATERIALS,29(2),177-182.
MLA Xu DP,et al."Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition".JOURNAL OF ELECTRONIC MATERIALS 29.2(2000):177-182.
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