SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Design of high brightness cubic-GaN LEDs grown on GaAs substrate
Sun YP; Shen XM; Zhang ZH; Zhao DG; Feng ZH; Fu Y; Zhang SN; Yang H; Sun YP,Chinese Acad Sci,State Key Lab Integrated Optoelect,Inst Semicond,Beijing 100083,Peoples R China.
2003
Source PublicationJOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN0374-4884
Volume42Issue:0Pages:S753-S756
AbstractThe Principle of optical thin film was used to calculate the feasibility of improving the light extraction efficiency of GaN/GaAs optical devices by wafer-bonding technique. The calculated results show that the light extraction efficiency of bonded samples can be improved by 2.66 times than the as-grown GaN/GaAs samples when a thin Ni layer was used as adhesive layer and Ag layer as reflective layer. Full reflectance spectrum comparison shows that reflectivity for the incident light of 459.2 nm of the bonded samples was improved by 2.4 times than the as-grown samples, which is consistent with the calculated results.
metadata_83chinese acad sci, state key lab integrated optoelect, inst semicond, beijing 100083, peoples r china
KeywordWafer Bunding Cubic Gan Light-emitting-diodes Field-effect Transistor Single-crystal Gan Microwave Performance Mirror Junction
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11626
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorSun YP,Chinese Acad Sci,State Key Lab Integrated Optoelect,Inst Semicond,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Sun YP,Shen XM,Zhang ZH,et al. Design of high brightness cubic-GaN LEDs grown on GaAs substrate[J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY,2003,42(0):S753-S756.
APA Sun YP.,Shen XM.,Zhang ZH.,Zhao DG.,Feng ZH.,...&Sun YP,Chinese Acad Sci,State Key Lab Integrated Optoelect,Inst Semicond,Beijing 100083,Peoples R China..(2003).Design of high brightness cubic-GaN LEDs grown on GaAs substrate.JOURNAL OF THE KOREAN PHYSICAL SOCIETY,42(0),S753-S756.
MLA Sun YP,et al."Design of high brightness cubic-GaN LEDs grown on GaAs substrate".JOURNAL OF THE KOREAN PHYSICAL SOCIETY 42.0(2003):S753-S756.
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