SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Pulsed excimer laser annealing of Mg-doped cubic GaN
Xu DP; Yang H; Li SF; Zhao DG; Ge H; Wu RH; Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
2000
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume209Issue:1Pages:203-207
AbstractA KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing (PLA) on Mg-doped cubic GaN alms. The laser-induced changes were monitored by photoluminescence (PL) measurement. It indicated that deep levels in as-grown cubic GaN : Mg films were neutralized by H and PLA treatment could break Mg-H-N complex. The evolution of emissions around 426 and 468 nm with different PLA conditions reflected the different activation of the involved deep levels. Rapid thermal annealing (RTA) in N-2 atmosphere reverts the luminescence of laser annealed samples to that of the pre-annealing state. The reason is that most H atoms still remained in the epilayers after PLA due to the short duration of the pulses and reoccupied the original locations during RTA. (C) 2000 Elsevier Science B.V. All rights reserved. PACS: 61.72.Vv; 61.72.Cc; 18.55. -m.
metadata_83chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china
KeywordAnnealing Cubic Gan Mg Doping Photoluminescence Molecular-beam Epitaxy Iii-v Nitride P-type Gan Optical-properties Compensation Diodes Films
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/12716
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorXu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Xu DP,Yang H,Li SF,et al. Pulsed excimer laser annealing of Mg-doped cubic GaN[J]. JOURNAL OF CRYSTAL GROWTH,2000,209(1):203-207.
APA Xu DP.,Yang H.,Li SF.,Zhao DG.,Ge H.,...&Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China..(2000).Pulsed excimer laser annealing of Mg-doped cubic GaN.JOURNAL OF CRYSTAL GROWTH,209(1),203-207.
MLA Xu DP,et al."Pulsed excimer laser annealing of Mg-doped cubic GaN".JOURNAL OF CRYSTAL GROWTH 209.1(2000):203-207.
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