中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共4条，第1-4条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Growth behavior of AlInGaN films 会议论文
JOURNAL OF CRYSTAL GROWTH, Sendai, JAPAN, MAY 21-24, 2008
作者:  Shang JZ;  Zhang BP;  Mao MH;  Cai LE;  Zhang JY;  Fang ZL;  Liu BL;  Yu JZ;  Wang QM;  Kusakabe K;  Ohkawa K;  Zhang, BP, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China.
Adobe PDF(813Kb)  |  收藏  |  浏览/下载：2189/416  |  提交时间：2010/03/09
Scanning Electron Microscope  
Nanostructure in the p-layer and its impacts on amorphous silicon solar cells 会议论文
JOURNAL OF NON-CRYSTALLINE SOLIDS, Lisbon, PORTUGAL, SEP 04-09, 2005
作者:  Liao, XB (Liao, Xianbo);  Du, WH (Du, Wenhui);  Yang, XS (Yang, Xiesen);  Povolny, H (Povolny, Henry);  Xiang, XB (Xiang, Xianbi);  Deng, XM (Deng, Xunming);  Sun, K (Sun, Kai);  Liao, XB, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xbliao2003@yahoo.com
Adobe PDF(323Kb)  |  收藏  |  浏览/下载：1653/350  |  提交时间：2010/03/29
Amorphous Semiconductors  
Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001) 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Wang YL;  Wu J;  Chen YH;  Wang ZG;  Zeng YP;  Wang, YL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(4662Kb)  |  收藏  |  浏览/下载：1214/180  |  提交时间：2010/03/29
Layer-ordering Orientation  
Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Shi GX;  Xu B;  Ye XL;  Jin P;  Chen YH;  Wang YL;  Cui CX;  Wang ZG;  Shi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(869Kb)  |  收藏  |  浏览/下载：1427/273  |  提交时间：2010/03/29
1.3 Mu-m