Growth behavior of AlInGaN films
Shang JZ; Zhang BP; Mao MH; Cai LE; Zhang JY; Fang ZL; Liu BL; Yu JZ; Wang QM; Kusakabe K; Ohkawa K; Zhang, BP, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China.
2009
会议名称4th Asian Conference on Crystal Growth and Crystal Technology
会议录名称JOURNAL OF CRYSTAL GROWTH
页码311 (3): 474-477 JAN 15
会议日期MAY 21-24, 2008
会议地点Sendai, JAPAN
出版地PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者ELSEVIER SCIENCE BV
ISSN0022-0248
部门归属[shang, j. z.; zhang, b. p.; mao, m. h.; cai, l. e.; zhang, j. y.; fang, z. l.; liu, b. l.; yu, j. z.; wang, q. m.] xiamen univ, dept phys, xiamen 361005, peoples r china; [shang, j. z.; zhang, b. p.; mao, m. h.; cai, l. e.; zhang, j. y.; fang, z. l.; liu, b. l.; yu, j. z.; wang, q. m.] xiamen univ, semicond photon res ctr, xiamen 361005, peoples r china; [zhang, j. y.; yu, j. z.; wang, q. m.] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; [kusakabe, k.; ohkawa, k.] tokyo univ sci, dept appl phys, shinjuku ku, tokyo 1628601, japan
摘要The structural and surface properties of AlInGaN quaternary films grown at different temperatures on GaN templates by metalorganic chemical vapor deposition are investigated. Formation of two quaternary layers is confirmed and the difference between them is pronounced when the growth temperature is increased. The surface is featured with V-shaped pits and cracks, whose characteristics are further found to be strongly dependent on the growth temperature of AlInGaN layers. The two-layer structure is interpreted by taking into account of the strain status in AlInGaN layers. (C) 2008 Elsevier B.V. All rights reserved.
关键词Scanning Electron Microscope
学科领域光电子学
主办者Intelligent Cosmos Acad Fdn.; Murata Sci Fdn.; SendaiTourism & Convent Bureau.
收录类别其他
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/8324
专题中国科学院半导体研究所(2009年前)
通讯作者Zhang, BP, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China.
推荐引用方式
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Shang JZ,Zhang BP,Mao MH,et al. Growth behavior of AlInGaN films[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2009:311 (3): 474-477 JAN 15.
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