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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Well-width dependence of the emission linewidth in ZnO/MgZnO quantum wells
期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 605
Authors:
Lv XQ (Lv, Xue-Qin)
;
Zhang JY (Zhang, Jiang-Yong)
;
Ying LY (Ying, Lei-Ying)
;
Liu WJ (Liu, Wen-Jie)
;
Hu XL (Hu, Xiao-Long)
;
Zhang BP (Zhang, Bao-Ping)
;
Qui ZR (Qui, Zhi-Ren)
;
Kuboya S (Kuboya, Shigeyuki)
;
Onabe K (Onabe, Kentaro)
Adobe PDF(357Kb)
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View/Download:584/157
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Submit date:2013/03/26
High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 卷号: 26, 期号: 5, 页码: Article no.55013
Authors:
Wu CM
;
Zhang BP
;
Shang JZ
;
Cai LE
;
Zhang JY
;
Yu JZ
;
Wang QM
;
Wu, CM, Xiamen Univ, Dept Phys, Lab Micro Nano Optoelect, Xiamen 361005, Peoples R China.
Adobe PDF(914Kb)
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View/Download:1652/426
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Submit date:2011/07/05
Chemical-vapor-deposition
Molecular-beam Epitaxy
Phase Epitaxy
Mirrors
Gan
Wavelengths
Resonant-cavity blue light-emitting diodes fabricated by two-step substrate transfer technique
期刊论文
ELECTRONICS LETTERS, 2011, 卷号: 47, 期号: 17, 页码: 986-U69
Authors:
Hu XL
;
Zhang JY
;
Liu WJ
;
Chen M
;
Zhang BP
;
Xu BS
;
Wang QM
;
Hu, XL (reprint author), Xiamen Univ, Dept Phys, Lab Micro Nano Optoelect, Xiamen 361005, Fujian, Peoples R China. bzhang@xmu.edu.cn
Adobe PDF(226Kb)
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View/Download:1397/468
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Submit date:2011/09/14
Gan
The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses
期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 11, 页码: Art. No. 117801
Authors:
Hu XL (Hu Xiao-Long)
;
Zhang JY (Zhang Jiang-Yong)
;
Shang JZ (Shang Jing-Zhi)
;
Liu WJ (Liu Wen-Jie)
;
Zhang BP (Zhang Bao-Ping)
;
Zhang, BP, Xiamen Univ, Dept Phys, Lab Micronano Optoelect, Xiamen 361005, Peoples R China.
Adobe PDF(217Kb)
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View/Download:987/256
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Submit date:2010/12/28
Exciton-longitudinal-optical-phonon
Ingan/gan Single Quantum Well
Gan Cap Layer
Huang-rhys Factor
Formation of high reflective Ni/Ag/Ti/Au contact on p-GaN
期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 卷号: 42, 期号: 9, 页码: 2420-2423
Authors:
Jiang F (Jiang Fang)
;
Cai LE (Cai Li-E)
;
Zhang JY (Zhang Jiang-Yong)
;
Zhang BP (Zhang Bao-Ping)
Adobe PDF(658Kb)
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View/Download:1591/678
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Submit date:2010/09/07
High Reflective
P-gan
Aes
Optimal Conditions
Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition
期刊论文
SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2010, 卷号: 53, 期号: 2, 页码: 313-316
Authors:
Wu CM (Wu ChaoMin)
;
Shang JZ (Shang JingZhi)
;
Zhang BP (Zhang BaoPing)
;
Zhang JY (Zhang JiangYong)
;
Yu JZ (Yu JinZhong)
;
Wang QM (Wang QiMing)
;
Zhang, BP, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China. 电子邮箱地址: bzhang@xmu.edu.cn
Adobe PDF(652Kb)
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View/Download:1193/286
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Submit date:2010/05/04
Mocvd
Dbr
High-reflectivity
Nitride
Surface-emitting Laser
Improvement of efficiency droop of GaN-based light-emitting devices by a rear nitride reflector
期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 卷号: 43, 期号: 1, 页码: 289-292
Authors:
Cai LE
;
Zhang BP
;
Zhang JY
;
Wu CM
;
Jiang F
;
Hu XL
;
Chen M
;
Wang QM
;
Zhang, BP, Xiamen Univ, Dept Phys, Lab Micro Nano Optoelect, Xiamen 361005, Peoples R China. bzhang@xmu.edu.cn
Adobe PDF(876Kb)
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View/Download:1582/662
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Submit date:2011/07/05
Diodes
Substantial photo-response of InGaN p-i-n homojunction solar cells
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 卷号: 24, 期号: 5, 页码: Art. No. 055009
Authors:
Zeng SW
;
Zhang BP
;
Sun JW
;
Cai JF
;
Chen C
;
Yu JZ
;
Zhang BP Xiamen Univ Dept Phys Xiamen 361005 Fujian Peoples R China. E-mail Address: bzhang@xmu.edu.cn
Adobe PDF(485Kb)
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View/Download:1139/333
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Submit date:2010/03/08
Fundamental-band Gap
Inn
Absorption
Alloys
Energy
Efficient hole transport in asymmetric coupled InGaN multiple quantum wells
期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 16, 页码: Art.No.161110
Authors:
Zhang JY (Zhang Jiang-Yong)
;
Cai LE (Cai Li-E)
;
Zhang BP (Zhang Bao-Ping)
;
Hu XL (Hu Xiao-Long)
;
Jiang F (Jiang Fang)
;
Yu JZ (Yu Jin-Zhong)
;
Wang QM (Wang Qi-Ming)
;
Zhang, JY, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: bzhang@xmu.edu.cn
;
qmwang@semi.ac.cn
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View/Download:994/314
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Submit date:2010/03/08
Growth behavior of AlInGaN films
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 期号: 3, 页码: 474-477
Authors:
Shang JZ
;
Zhang BP
;
Mao MH
;
Cai LE
;
Zhang JY
;
Fang ZL
;
Liu BL
;
Yu JZ
;
Wang QM
;
Kusakabe K
;
Ohkawa K
;
Zhang BP Xiamen Univ Dept Phys Xiamen 361005 Peoples R China. E-mail Address: bzhang@xmu.edu.cn
Adobe PDF(813Kb)
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View/Download:1055/256
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Submit date:2010/03/08
Scanning Electron Microscope
Strain
X-ray Diffraction
Alingan