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High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 卷号: 26, 期号: 5, 页码: Article no.55013
Authors:  Wu CM;  Zhang BP;  Shang JZ;  Cai LE;  Zhang JY;  Yu JZ;  Wang QM;  Wu, CM, Xiamen Univ, Dept Phys, Lab Micro Nano Optoelect, Xiamen 361005, Peoples R China.
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Chemical-vapor-deposition  Molecular-beam Epitaxy  Phase Epitaxy  Mirrors  Gan  Wavelengths  
Resonant-cavity blue light-emitting diodes fabricated by two-step substrate transfer technique 期刊论文
ELECTRONICS LETTERS, 2011, 卷号: 47, 期号: 17, 页码: 986-U69
Authors:  Hu XL;  Zhang JY;  Liu WJ;  Chen M;  Zhang BP;  Xu BS;  Wang QM;  Hu, XL (reprint author), Xiamen Univ, Dept Phys, Lab Micro Nano Optoelect, Xiamen 361005, Fujian, Peoples R China. bzhang@xmu.edu.cn
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Gan  
The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 11, 页码: Art. No. 117801
Authors:  Hu XL (Hu Xiao-Long);  Zhang JY (Zhang Jiang-Yong);  Shang JZ (Shang Jing-Zhi);  Liu WJ (Liu Wen-Jie);  Zhang BP (Zhang Bao-Ping);  Zhang, BP, Xiamen Univ, Dept Phys, Lab Micronano Optoelect, Xiamen 361005, Peoples R China.
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Exciton-longitudinal-optical-phonon  Ingan/gan Single Quantum Well  Gan Cap Layer  Huang-rhys Factor  
Improvement of efficiency droop of GaN-based light-emitting devices by a rear nitride reflector 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 卷号: 43, 期号: 1, 页码: 289-292
Authors:  Cai LE;  Zhang BP;  Zhang JY;  Wu CM;  Jiang F;  Hu XL;  Chen M;  Wang QM;  Zhang, BP, Xiamen Univ, Dept Phys, Lab Micro Nano Optoelect, Xiamen 361005, Peoples R China. bzhang@xmu.edu.cn
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Diodes  
Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition 期刊论文
SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2010, 卷号: 53, 期号: 2, 页码: 313-316
Authors:  Wu CM (Wu ChaoMin);  Shang JZ (Shang JingZhi);  Zhang BP (Zhang BaoPing);  Zhang JY (Zhang JiangYong);  Yu JZ (Yu JinZhong);  Wang QM (Wang QiMing);  Zhang, BP, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China. 电子邮箱地址: bzhang@xmu.edu.cn
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Mocvd  Dbr  High-reflectivity  Nitride  Surface-emitting Laser  
Substantial photo-response of InGaN p-i-n homojunction solar cells 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 卷号: 24, 期号: 5, 页码: Art. No. 055009
Authors:  Zeng SW;  Zhang BP;  Sun JW;  Cai JF;  Chen C;  Yu JZ;  Zhang BP Xiamen Univ Dept Phys Xiamen 361005 Fujian Peoples R China. E-mail Address: bzhang@xmu.edu.cn
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Fundamental-band Gap  Inn  Absorption  Alloys  Energy  
Growth behavior of AlInGaN films 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 期号: 3, 页码: 474-477
Authors:  Shang JZ;  Zhang BP;  Mao MH;  Cai LE;  Zhang JY;  Fang ZL;  Liu BL;  Yu JZ;  Wang QM;  Kusakabe K;  Ohkawa K;  Zhang BP Xiamen Univ Dept Phys Xiamen 361005 Peoples R China. E-mail Address: bzhang@xmu.edu.cn
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Scanning Electron Microscope  Strain  X-ray Diffraction  Alingan  
Blue-violet Lasing of Optically Pumped GaN-Based Vertical Cavity Surface-Emitting Laser With Dielectric Distributed Bragg Reflectors 期刊论文
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2009, 卷号: 27, 期号: 1-4, 页码: 55-59
Authors:  Zhang JY;  Cai LE;  Zhang BP;  Li SQ;  Lin F;  Shang JZ;  Wang DX;  Lin KC;  Yu JZ;  Wang QM;  Zhang JY Xiamen Univ Dept Phys Xiamen 361005 Fujian Peoples R China. E-mail Address: jyzhang07@semi.ac.cn;  liecai@xmu.edu.cn;  bzhang@xmu.edu.cn;  lsq@sanan-e.com;  lf@sanan-e.com;  rik_dolphin@hotmail.com;  wdx@sanan-e.com;  si-monlin@sanan-e.com;  jzyu@semi.ac.cn;  qmwang@semi.ac.cn
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Dielectric Distributed Bragg Reflector (Dbr)  Gan  Laser Lift-off  Vertical Cavity Surface-emitting Laser (Vcsel)  
Growth behavior of AlInGaN films 会议论文
JOURNAL OF CRYSTAL GROWTH, Sendai, JAPAN, MAY 21-24, 2008
Authors:  Shang JZ;  Zhang BP;  Mao MH;  Cai LE;  Zhang JY;  Fang ZL;  Liu BL;  Yu JZ;  Wang QM;  Kusakabe K;  Ohkawa K;  Zhang, BP, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China.
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Scanning Electron Microscope  
High Al-content AlInGaN epilayers with different thicknesses grown on GaN/sapphire templates 期刊论文
APPLIED SURFACE SCIENCE, 2008, 卷号: 255, 期号: 5, 页码: 3350-3353 Part 2
Authors:  Shang JZ;  Zhang BP;  Wu CM;  Cai LE;  Zhang JY;  Yu JZ;  Wang QM;  Zhang, BP, Xiamen Univ, Dept Phys, 422 SiMing Rd S, Xiamen 361005, Peoples R China. 电子邮箱地址: bzhang@xmu.edu.cn
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Xps