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Observation of the surface circular photogalvanic effect in InN films 期刊论文
SOLID STATE COMMUNICATIONS, 2009, 卷号: 149, 期号: 25-26, 页码: 1004-1007
Authors:  Zhang Z;  Zhang R;  Xie ZL;  Liu B;  Li M;  Fu DY;  Fang HN;  Xiu XQ;  Lu H;  Zheng YD;  Chen YH;  Tang CG;  Wang ZG;  Zhang R Nanjing Univ Key Lab Adv Photon & Elect Mat Nanjing 210093 Peoples R China. E-mail Address: rzhang@nju.edu.cn
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Inn  Surface Charge Accumulation Layer  Spin-dependent Current  Spin Splitting  
Growth behavior of AlInGaN films 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 期号: 3, 页码: 474-477
Authors:  Shang JZ;  Zhang BP;  Mao MH;  Cai LE;  Zhang JY;  Fang ZL;  Liu BL;  Yu JZ;  Wang QM;  Kusakabe K;  Ohkawa K;  Zhang BP Xiamen Univ Dept Phys Xiamen 361005 Peoples R China. E-mail Address: bzhang@xmu.edu.cn
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Scanning Electron Microscope  Strain  X-ray Diffraction  Alingan  
Growth behavior of AlInGaN films 会议论文
JOURNAL OF CRYSTAL GROWTH, Sendai, JAPAN, MAY 21-24, 2008
Authors:  Shang JZ;  Zhang BP;  Mao MH;  Cai LE;  Zhang JY;  Fang ZL;  Liu BL;  Yu JZ;  Wang QM;  Kusakabe K;  Ohkawa K;  Zhang, BP, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China.
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Scanning Electron Microscope  
平台式FPGA中可重构存储器模块的设计 期刊论文
微计算机信息. 嵌入式与SOC, 2008, 卷号: 24, 期号: 2, 页码: 191-193
Authors:  段会福;  于芳;  陈陵都;  刘忠立
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一种功率MOSFET驱动电路 专利
专利类型: 发明, 申请日期: 2007-10-17, 公开日期: 2009-06-04, 2009-06-11
Inventors:  高峰;  李春寄;  刘忠立;  于芳
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一种幅度调制隔离反馈控制电路 专利
专利类型: 发明, 申请日期: 2007-10-17, 公开日期: 2009-06-04, 2009-06-11
Inventors:  高峰;  李春寄;  刘忠立;  于芳
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抗辐射128kb PDSOI静态随机存储器 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 7, 页码: 1139-1143
Authors:  赵凯;  刘忠立;  于芳;  高见头;  肖志强;  洪根深
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Defect influence on luminescence efficiency of GaN-based LEDs 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 卷号: 9, 期号: 1-3, 页码: 371-374
Authors:  Li SP (Li Shuping);  Fang ZL (Fang Zhilai);  Chen HY (Chen Hangyang);  Li JC (Li Jinchai);  Chen XH (Chen Xiaohong);  Yuan XL (Yuan Xiaoli);  Sekiguchi T (Sekiguchi Takashi);  Wang QM (Wang Qiming);  Kang JY (Kang Junyong);  Kang, JY, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China. E-mail: jykang@xmu.edu.cn
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Defects  Gan  Luminescence Efficiency  Led  
Defect influence on luminescence efficiency of GaN-based LEDs 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
Authors:  Li SP (Li Shuping);  Fang ZL (Fang Zhilai);  Chen HY (Chen Hangyang);  Li JC (Li Jinchai);  Chen XH (Chen Xiaohong);  Yuan XL (Yuan Xiaoli);  Sekiguchi T (Sekiguchi Takashi);  Wang QM (Wang Qiming);  Kang JY (Kang Junyong);  Kang, JY, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China. 电子邮箱地址: jykang@xmu.edu.cn
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Defects  
Photoluminescence of low-dimensional semiconductor structures under pressure 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2005, 卷号: 24, 期号: 3, 页码: 174-178
Authors:  Li GH;  Chen Y;  Fang ZL;  Ma BS;  Su FH;  Ding K;  Li, GH, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
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Pressure