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Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2011, 卷号: 14, 期号: 2, 页码: 108-113
Authors:  Jin, L;  Zhou, HY;  Qu, SC;  Wang, ZG;  Jin, L (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912,A 35,Tsinghua E Rd, Beijing 100083, Peoples R China,jinlan06@semi.ac.cn;  qsc@semi.ac.cn
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Patterned Substrate  Ion implantatIon  Ordered Nanodots  Anodic Aluminum Oxide  Quantum Dots  Islands  Growth  Semiconductors  Nanostructures  Computation  Ingaas  
Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.83501
Authors:  Zhou XL;  Chen YH;  Zhang HY;  Zhou GY;  Li TF;  Liu JQ;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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Inas Islands  Mu-m  Escape  Gaas  Gaas(100)  Substrate  
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.94311
Authors:  Zhou XL;  Chen YH;  Li TF;  Zhou GY;  Zhang HY;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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Self-organized Islands  Molecular-beam-epitaxy  Optical-properties  Surfaces  Emission  Density  Size  
Growth Simulations of Self-Assembled Nanowires on Stepped Substrates 期刊论文
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2011, 卷号: 17, 期号: 4, 页码: 960-965
Authors:  Liang S;  Kong DH;  Zhu HL;  Wang W;  Liang, S (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China, liangsong@red.semi.ac.cn
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Chemical-vapor-deposition  Molecular-beam Epitaxy  Quantum Dots  Surface Migration  Fabrication  Gaas(100)  Islands  Wires  
Formation trends of ordered self-assembled nanoislands on stepped substrates 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 7, 页码: Art. No. 073512
Authors:  Liang S (Liang S.);  Zhu HL (Zhu H. L.);  Kong DH (Kong D. H.);  Wang W (Wang W.);  Liang, S, Chinese AcadSci, InstSemicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China. 电子邮箱地址: liangsong@red.semi.ac.cn
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Chemical-vapor-deposition  Inas Quantum Dots  Molecular-beam Epitaxy  Gaas  Surfaces  Islands  Growth  Fabrication  Migration  Arrays  
GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 6, 页码: Art. No. 067801
Authors:  Wang PF;  Xiong YH;  Wang HL;  Huang SS;  Ni HQ;  Xu YQ;  He ZH;  Niu ZC;  Wang PF Chinese Acad Sci Inst Semicond State Key Lab Superlattice & Microstruct Beijing 100083 Peoples R China. E-mail Address: pfwang@semi.ac.cn
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Mu-m  Laser  Islands  
Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 5, 页码: Art. No. 055310
Authors:  Liang S;  Zhu HL;  Ye XL;  Pan JQ;  Zhao LJ;  Wang W;  Liang S Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
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Chemical-vapor-deposition  Multiatomic Steps  Islands  Growth  Fabrication  Epitaxy  
Optical study of lateral carrier transfer in (In,Ga)As/GaAs quantum-dot chains 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 93, 期号: 1, 页码: Art. No. 011107
Authors:  Wang, BR;  Sun, BQ;  Ji, Y;  Dou, XM;  Xu, ZY;  Wang, ZM;  Salamo, GJ;  Wang, BR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: brwang04@semi.ac.cn
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Localized States  Islands  Wires  Superlattices  Organization  Gaas(100)  Excitons  Growth  Decay  Gaas  
Spectroscopy of long wavelength coupled quantum dots 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 卷号: 41, 期号: 17, 页码: Art. No. 175102
Authors:  Xiong, YH;  Huang, SS;  Ni, HQ;  Dou, XM;  Niu, ZC;  Xiong, YH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zcniu@red.semi.ac.cn
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Electron-spin  Emission  Islands  Growth  States  
Ordered InAs quantum dots with controllable periods grown on stripe-patterned GaAs substrates 期刊论文
CHINESE PHYSICS LETTERS, 2007, 卷号: 24, 期号: 9, 页码: 2689-2691
Authors:  Ren, YY (Ren Yun-Yun);  Xu, B (Xu Bo);  Wang, ZG (Wang Zhan-Guo);  Liu-Ming (Liu-Ming);  Long, SB (Long Shi-Bing);  Ren, YY, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yunyun_ren@mail.semi.ac.cn
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Ge Islands