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Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 卷号: 19, 期号: 1, 页码: 197-201
Authors:  Jiang WH;  Xu HZ;  Xu B;  Zhou W;  Gong Q;  Ding D;  Liang JB;  Wang ZG;  Jiang WH,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Oriented Gaas  Inas Islands  High-index  Surfaces  Temperature  Topography  Strain  Laser  
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
Authors:  Sun ZZ;  Liu FQ;  Wu J;  Ye XL;  Ding D;  Xu B;  Liang JB;  Wang ZG;  Sun ZZ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
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Self-assembled Quantum Dots  Inp Substrate  High Index  Mbe  In(Ga  Molecular-beam-epitaxy  Al)as/inAlas/inp  Vapor-phase Epitaxy  Gaas  Islands  Photoluminescence  Inp(001)  Growth  Lasers  
Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
Authors:  Jiang WH;  Xu HZ;  Xu B;  Ye XL;  Zhou W;  Ding D;  Liang JB;  Wang ZG;  Jiang WH Chinese Acad Sci Inst Semicond Inst Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
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Quantum Dots  High Index  Molecular Beam Epitaxy  Photoluminescence  Surface Segregation  Oriented Gaas  Ingaas  Islands  Wells  Disks  
The effect of substrate orientation on the morphology of InAs nanostructures on (001) and (11n)A/B(n=1-5) InP substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 218, 期号: 2-4, 页码: 203-208
Authors:  Sun ZZ;  Wu J;  Chen YH;  Liu FQ;  Ding D;  Li YF;  Xu B;  Wang ZG;  Sun ZZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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High-index Inp Substrate  In(Ca)As Nanostructures  Mbe  Molecular-beam-epitaxy  Ingaas Quantum Dots  Oriented Gaas  Optical Characterization  Islands  
Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 219, 期号: 1-2, 页码: 17-21
Authors:  Li YF;  Liu FQ;  Xu B;  Ye XL;  Ding D;  Sun ZZ;  Jiang WH;  Liu HY;  Zhang YC;  Wang ZG;  Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Quantum Dots  Molecular Beam Epitaxy  High Index  Molecular-beam Epitaxy  Strained Islands  Gaas  Organization  Inp(001)  Lasers  Ingaas  Layer  
Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates 期刊论文
APPLIED SURFACE SCIENCE, 2000, 卷号: 167, 期号: 3-4, 页码: 191-196
Authors:  Li YF;  Ye XL;  Liu FQ;  Xu B;  Ding D;  Jiang WH;  Sun ZZ;  Liu HY;  Zhang YC;  Wang ZG;  Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Self-assembled Quantum Dots  Molecular Beam Epitaxy  High Index  Molecular-beam Epitaxy  Vapor-phase Epitaxy  Quantum Dots  Islands  Inp(001)  Ingaas  
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 期刊论文
PHYSICA E, 2000, 卷号: 8, 期号: 2, 页码: 164-169
Authors:  Sun ZZ;  Liu FQ;  Wu J;  Ye XL;  Ding D;  Xu B;  Liang JB;  Wang ZG;  Sun ZZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Self-assembled Quantum Dots  Inp Substrate  High Index  Mbe  In(Ga  Molecular-beam-epitaxy  Al)as/inAlas/inp  Vapor-phase Epitaxy  Gaas  Islands  Photoluminescence  Inp(001)  Growth  Lasers  
Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 期刊论文
PHYSICA E, 2000, 卷号: 8, 期号: 2, 页码: 134-140
Authors:  Jiang WH;  Xu HZ;  Xu B;  Ye XL;  Zhou W;  Ding D;  Liang JB;  Wang ZG;  Jiang WH,Chinese Acad Sci,Inst Semicond,Inst Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Quantum Dots  High Index  Molecular Beam Epitaxy  Photoluminescence  Surface Segregation  Oriented Gaas  Ingaas  Islands  Wells  Disks  
Self-limiting MBE growth and characterization of three-dimensionally confined nanostructures on patterned GaAs(311)A substrates 期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 1999, 卷号: 28, 期号: 1, 页码: 1-5
Authors:  Niu ZC;  Notzel R;  Jahn U;  Schonherr HP;  Fricke J;  Ploog KH;  Niu ZC,Paul Drude Inst Festkorperelekt,Hausvogteipl 5-7,D-10117 Berlin,Germany.
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High-index Substrates  Molecular Beam Epitaxy (Mbe)  Patterned Growth  Sidewall Quantum Wires  Three-dimensionally Confined Nanostructures  Gaas  Molecular-beam Epitaxy  Photoluminescence  Dots  
Morphology and photoluminescence of GeSi self-assembled quantum dot on Si(113) 期刊论文
ACTA PHYSICA SINICA, 1999, 卷号: 48, 期号: 9, 页码: 1745-1750
Authors:  Si JJ;  Yang QQ;  Teng D;  Wang HJ;  Yu JZ;  Wang QM;  Guo LW;  Zhou JM;  Si JJ,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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Scanning-tunneling-microscopy  Room-temperature  Gaas-surfaces  High-index  Growth  Ingaas  Superlattices  Si(100)  Epitaxy