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Self-assembly of single “square”quantum ring in gold-free GaAs nanowires 期刊论文
Nanoscale, 2014, 卷号: 6, 期号: 6, 页码: 3190-3196
Authors:  Guowei Zha, Xiangjun Shang, Dan Su, Ying Yu, Bin Wei, Li Wang, Mifeng Li, Lijuan Wang,Jianxing Xu, Haiqiao Ni, Yuan Ji, Baoquan Sun and Zhichuan Niu
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Gaas Nanowires  Quantum Ring  Photoluminescence  Epitaxy  
Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 5, 页码: 54320
Authors:  Ning JQ;  Xu SJ;  Ruan XZ;  Ji Y;  Zheng HZ;  Sheng WD;  Liu HC;  Ning, JQ (reprint author), Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China, sjxu@hkucc.hku.hk
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Wells  Relaxation  Hole  Photoluminescence  Semiconductors  Localization  Transitions  Excitons  Carriers  Growth  
GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 33, 页码: 335102
Authors:  He JF;  Wang HL;  Shang XJ;  Li MF;  Zhu Y;  Wang LJ;  Yu Y;  Ni HQ;  Xu YQ;  Niu ZC;  He, JF (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China, hejifang@semi.ac.cn
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1.3 Mu-m  Strain Relief  Lasers  Substrate  Photoluminescence  Dislocations  Operation  Range  
Correlation measurement of quantum cascade photons in single InAs quantum dot 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 1, 页码: Article no.17804
Authors:  Li YA;  Dou XM;  Chang XY;  Ni HQ;  Niu ZC;  Sun BQ;  Sun, BQ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. bqsun@red.semi.ac.cn
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Single Quantum Dot  Exciton And biExciton  Photoluminescence Spectrum  Cascade Emission  
Study on Optical Properties of Type-II SnO2/ZnS Core/Shell Nanowires 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 卷号: 115, 期号: 15, 页码: 7225-7229
Authors:  Meng XQ;  Wu FM;  Li JB;  Li, JB, Zhejiang Normal Univ, Res Ctr Light Emitting Diodes LED, Jinhua 321004, Peoples R China. jbli@semi.ac.cn
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Colloidal Nanocrystal Heterostructures  Photoluminescence Properties  Lattice Dynamics  Tin Oxide  Films  Nanostructures  Spectra  Exciton  Arrays  Rutile  
Efficient 1.53 mu m emission and energy transfer in Si/Er-Si-O multilayer structure 期刊论文
MATERIALS RESEARCH BULLETIN, 2011, 卷号: 46, 期号: 2, 页码: 262-265
Authors:  Zheng J;  Zuo YH;  Wang W;  Tao YL;  Xue CL;  Cheng BW;  Wang QM;  Zheng, J, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, A35 QingHua E Rd, Beijing 100083, Peoples R China. zhengjun@semi.ac.cn
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Multilayers  Inorganic Compounds  Sputtering  Optical Properties  Doped Si/sio2 Superlattices  Erbium Silicate  Er3++  Luminescence  Films  Photoluminescence  
Photoluminescence of CdSe nanowires grown with and without metal catalyst 期刊论文
NANO RESEARCH, 2011, 卷号: 4, 期号: 4, 页码: 343-359
Authors:  Fasoli A;  Colli A;  Martelli F;  Pisana S;  Tan PH;  Ferrari AC;  Ferrari, AC, Univ Cambridge, Dept Engn, Cambridge CB3 0FA, Englandacf26@eng.cam.ac.uk
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Cdse  Nanowires  Photoluminescence  Chemical-vapor-deposition  Shape-selective Synthesis  Liquid-solid Mechanism  Optical-properties  Silicon Nanowires  Si Nanowires  Znse Nanowires  Semiconductor Nanocrystals  Structural-properties  Epitaxial-growth  
Highly efficient 1.53 mu m luminescence in ErxYb2-xSi2O7 thin films grown on Si substrate 期刊论文
MATERIALS LETTERS, 2011, 卷号: 65, 期号: 5, 页码: 860-862
Authors:  Zheng J;  Tao YL;  Wang W;  Zhang LZ;  Zuo YH;  Xue CL;  Cheng BW;  Wang QM;  Zheng, J, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. zhengjun@semi.ac.cn
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Luminescence  Optical Materials And Properties  Sputtering  Thin Films  Photoluminescence  Er3++  
Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2011, 卷号: 43, 期号: 4, 页码: 869-873
Authors:  Li TF;  Chen YH;  Lei W;  Zhou XL;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
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Quantum Dots  Light-emission  Wells  Photoluminescence  
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 314, 期号: 1, 页码: 39-42
Authors:  Shi K;  Yang AL;  Wang J;  Song HP;  Xu XQ;  Sang L;  Wei HY;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  xlliu@semi.ac.cn
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Metal Organic Chemical Vapor Deposition  Sapphire  Zinc Compounds  Semiconducting Ii-vi Materials  Vapor-phase Epitaxy  Optical-properties  Zno Nanorods  Raman-scattering  M-plane  Films  Photoluminescence  Deposition  Nanowires  Fields