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4H-SiC快速外延生长研究 学位论文
, 北京: 中国科学院大学, 2015
Authors:  刘斌
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4h-sic  碳化硅  快速外延生长  Fast Epitaxial Growth  
High power885 nm laser diodes with graded optical expand structures for small divergence angle 期刊论文
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 卷号: 40, 期号: 12, 页码: 2382-2387
Authors:  Wang, Jun;  Bai, Yiming;  Liu, Yuanyuan;  He, Weili;  Xiong, Cong;  Wang, Cuiluan;  Feng, Xiaoming;  Zhong, Li;  Liu, Suping;  Ma, Xiaoyu;  Wang, J.(wangjun@semi.ac.cn)
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Energy Efficiency  Epitaxial Growth  High Power Lasers  Optimization  Pumping(Laser)  Quantum Well Lasers  Semiconductor Quantum Wells  
Molecular beam epitaxy growth of GaAs on an offcut Ge substrate 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 1, 页码: Article no.18102
Authors:  He JF;  Niu ZC;  Chang XY;  Ni HQ;  Zhu Y;  Li MF;  Shang XJ;  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. zcniu@semi.ac.cn
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Molecular Beam Epitaxy  Anti-phase Domain  Gaas/ge Interface  Chemical Vapor-deposition  Junction Solar-cells  Domain-free Growth  Temperature  Quality  Future  
Preparation and photoluminescence study of patterned substrate quantum wires 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 2, 页码: Article no.20703
Authors:  Wang XP;  Yang XH;  Han Q;  Ju YL;  Du Y;  Zhu B;  Wang J;  Ni HQ;  He JF;  Wang GW;  Niu ZC;  Wang, XP, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. xpwang@semi.ac.cn
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V-groove Substrate  Quantum Wires  Gaas  Epitaxial-growth  Transistor  
2-5m InAs/GaSb superlattices infrared photodetector 期刊论文
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406
Authors:  Xu, Yingqiang;  Tang, Bao;  Wang, Guowei;  Ren, Zhengwei;  Niu, Zhichuan;  Xu, Y.(yingqxu@semi.ac.cn)
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Alignment  Atomic Force Microscopy  Atomic Spectroscopy  Detectors  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Indium Arsenide  Infrared Detectors  Molecular Beam Epitaxy  Molecular Beams  Optoelectronic Devices  Semiconducting Gallium  Superlattices  Transmission Electron Microscopy  x Ray Diffraction  
Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy 期刊论文
Optoelectronics Letters, 2011, 卷号: 7, 期号: 5, 页码: 325-329
Authors:  Zhu, Yan;  Ni, Hai-qiao;  Wang, Hai-li;  He, Ji-fang;  Li, Mi-feng;  Shang, Xiang-jun;  Niu, Zhi-chuan;  Zhu, Y.(ttcow@126.com)
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Epitaxial Growth  Gallium Arsenide  Growth(Materials)  Molecular Beam Epitaxy  Semiconducting Gallium  Semiconducting Indium  Semiconductor Quantum Wells  
Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 5, 页码: 54320
Authors:  Ning JQ;  Xu SJ;  Ruan XZ;  Ji Y;  Zheng HZ;  Sheng WD;  Liu HC;  Ning, JQ (reprint author), Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China, sjxu@hkucc.hku.hk
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Wells  Relaxation  Hole  Photoluminescence  Semiconductors  Localization  Transitions  Excitons  Carriers  Growth  
First principles study of the electronic properties of twinned SiC nanowires 期刊论文
JOURNAL OF NANOPARTICLE RESEARCH, 2011, 卷号: 13, 期号: 1, 页码: 185-191
Authors:  Wang ZG;  Wang SJ;  Zhang CL;  Li JB;  Wang, ZG, Univ Elect Sci & Technol China. , Dept Appl Phys, Chengdu 610054, Peoples R China. zgwang@uestc.edu.cn
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Twinned Sic Nanowires  Electronic Properties  Ab Initio  Modeling And Simulation  Silicon-carbide Nanowires  Field-emission Properties  Molecular-beam Epitaxy  Inas Nanowires  Growth  Nanotubes  Nitride  Diffusion  Nanorods  Energy  
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43004
Authors:  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Zhu, Yan;  Chang, Xiuying;  Ni, Haiqiao;  Xu, Yingqiang;  Niu, Zhichuan;  He, J.(hejifang@semi.ac.cn)
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Atomic Force Microscopy  Buffer Layers  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Germanium  Growth Temperature  High Resolution Transmission Electron Microscopy  Molecular Beam Epitaxy  Molecular Beams  Semiconducting Gallium  Semiconductor Device Structures  Semiconductor Quantum Wells  
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.50
Authors:  Shi K;  Li DB;  Song HP;  Guo Y;  Wang J;  Xu XQ;  Liu JM;  Yang AL;  Wei HY;  Zhang B;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  lidb@ciomp.ac.cn;  xlliu@semi.ac.cn
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Chemical-vapor-deposition  Core-level Photoemission  Sb-doped Sno2  Inn  Growth  Gan  Naxwo3  Alloys  Green  State