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Shape and spatial correlation control of InAs-InAlAs-InP(001) nanostructure superlattices 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 6, 页码: Art.No.063114
Authors:  Lei W;  Chen YH;  Jin P;  Ye XL;  Wang YL;  Xu B;  Wang ZG;  Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
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Vertical Self-organization  Quantum Wires  Surface  Growth  Alloy  Inalas/inp(001)  Nanowires  Inp(001)  Islands  Arrays  
Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 286, 期号: 1, 页码: 23-27
Authors:  Lei W;  Chen YH;  Wang YL;  Huang XQ;  Zhao C;  Liu JQ;  Xu B;  Jin P;  Zeng YP;  Wang ZG;  Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: ahleiwen@red.semi.ac.cn
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Defects  Lateral Composition Modulation  Photoluminescence  Molecular Beam Epitaxy  Quantum Wires  Semiconductor Iii-v Material  Dots  Heterostructures  Inalas/inp(001)  Spectroscopy  Wavelength  Inp(001)  
Realization of highly uniform self-assembled InAs quantum wires by the strain compensating technique 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 87, 期号: 8, 页码: Art.No.083108
Authors:  Huang, XQ;  Wang, YL;  Li, L;  Liang, L;  Liu, FQ;  Liu, FQ, Chinese Acad Sci, Inst Semicond, Key lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: fqliu@red.semi.ac.cn
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Inp(001)  
Controllable growth of semiconductor nanometer structures 会议论文
MICROELECTRONICS JOURNAL, 34 (5-8), FORTALEZA, BRAZIL, DEC 08-13, 2002
Authors:  Wang ZG;  Wu J;  Wang ZG Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
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Inas Quantum Dots  Self-organization  Monolayer Coverage  Density  Gaas  Islands  Inp(001)  Epitaxy  
Controllable growth of semiconductor nanometer structures 期刊论文
MICROELECTRONICS JOURNAL, 2003, 卷号: 34, 期号: 5-8, 页码: 379-382
Authors:  Wang ZG;  Wu J;  Wang ZG,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular Beam Epitaxy  Nanostructures  Inas Quantum Dots  Self-organization  Monolayer Coverage  Density  Gaas  Islands  Inp(001)  Epitaxy  
Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
Authors:  Wu J;  Zeng YP;  Cui LJ;  Zhu ZP;  Wang BX;  Wang ZG;  Wu J Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
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Inp(001)  Epitaxy  Gaas  
Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate 期刊论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2002, 卷号: 16, 期号: 28-29, 页码: 4423-4426
Authors:  Wu J;  Zeng YP;  Cui LJ;  Zhu ZP;  Wang BX;  Wang ZG;  Wu J,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
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Inp(001)  Epitaxy  Gaas  
Origin of the vertical-anticorrelation arrays of InAs/InAlAs nanowires with a fixed layer-ordering orientation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2002, 卷号: 91, 期号: 9, 页码: 6021-6026
Authors:  Sun ZZ;  Yoon SF;  Wu J;  Wang ZG;  Sun ZZ,Nanyang Technol Univ,Sch Elect & Elect Engn,Nanyang Ave,Singapore 639798,Singapore.
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Molecular-beam Epitaxy  Morphology  Modulations  Surfaces  Inp(001)  Growth  Alloy  Inp  
Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 223, 期号: 4, 页码: 518-522
Authors:  Li YF;  Lin F;  Xu B;  Liu FQ;  Ye WL;  Ding D;  Wang ZG;  Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular Beam Epitaxy  Semiconductor Iii-v Materials  Quantum Dots  Surface-morphology  Low-threshold  Inp  Inp(001)  Luminescence  Organization  Islands  Layer  
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
Authors:  Sun ZZ;  Liu FQ;  Wu J;  Ye XL;  Ding D;  Xu B;  Liang JB;  Wang ZG;  Sun ZZ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
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Self-assembled Quantum Dots  Inp Substrate  High Index  Mbe  In(Ga  Molecular-beam-epitaxy  Al)as/inAlas/inp  Vapor-phase Epitaxy  Gaas  Islands  Photoluminescence  Inp(001)  Growth  Lasers