SEMI OpenIR
(Note: the search results are based on claimed items)

Browse/Search Results:  1-10 of 68 Help

Filters            
Selected(0)Clear Items/Page:    Sort:
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 572-575
Authors:  Zhou HY;  Qu SC;  Jin P;  Xu B;  Ye XL;  Liu JP;  Wang ZG;  Qu, SC, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. qsc@semi.ac
Adobe PDF(584Kb)  |  Favorite  |  View/Download:1488/365  |  Submit date:2011/07/05
Atom Force Microscopy  Nanostructures  Molecular-beam Epitaxy  Nanomaterials  Semiconducting Gallium Arsenide  Quantum-dots  Anodic Alumina  Arrays  Placement  Inas  
The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 7, 页码: Article no.71914
Authors:  Zhou GY;  Chen YH;  Yu JL;  Zhou XL;  Ye XL;  Jin P;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
Adobe PDF(333Kb)  |  Favorite  |  View/Download:1152/357  |  Submit date:2011/07/05
Spectroscopy  
Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 6, 页码: Art. No. 064202
Authors:  Wu J;  Lu XQ;  Jin P;  Meng XQ;  Wang ZG
Adobe PDF(279Kb)  |  Favorite  |  View/Download:1181/413  |  Submit date:2011/07/07
Light-emitting-diodes  Optical-properties  Tuning Range  Nm  Emission  Spectrum  Spectroscopy  
Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721
Authors:  Pan X;  Wang XL;  Xiao HL;  Wang CM;  Yang CB;  Li W;  Wang WY;  Jin P;  Wang ZG
Adobe PDF(549Kb)  |  Favorite  |  View/Download:1384/460  |  Submit date:2011/07/07
Photoluminescence  Raman Scattering  Pulsed Atomic Layer Epitaxy  Algan Alloys  
Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 15, 页码: Art. No. 151904
Authors:  Yang AL;  Song HP;  Liang DC;  Wei HY;  Liu XL;  Jin P;  Qin XB;  Yang SY;  Zhu QS;  Wang ZG;  Yang, AL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: alyang@semi.ac.cn;  xlliu@semi.ac.cn
Adobe PDF(341Kb)  |  Favorite  |  View/Download:1802/463  |  Submit date:2010/05/04
Alloying  Annealing  Electrical Conductivity  Excitons  Ii-vi Semiconductors  Magnesium Compounds  Mocvd Coatings  Photoluminescence  Positron Annihilation  Semiconductor Thin Films  Vacancies (Crystal)  Wide Band Gap Semiconductors  Zinc Compounds  Semiconductors  Emission  Origin  Diodes  
A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 1, 页码: Art. No. 018104
Authors:  Lu XQ;  Jin P;  Wang ZG;  Jin, P, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: pengjin@red.semi.ac.cn
Adobe PDF(110Kb)  |  Favorite  |  View/Download:1146/344  |  Submit date:2010/04/04
Quantum-dot  Tunable Laser  External Cavity  Broadband Tuning  Nm Tuning Range  Superluminescent Diodes  Light-source  Well Laser  Spectroscopy  Spectrum  
Broadband external cavity tunable quantum dot lasers with low injection current density 期刊论文
OPTICS EXPRESS, 2010, 卷号: 18, 期号: 9, 页码: 8916-8922
Authors:  Lv XQ;  Jin P;  Wang WY;  Wang ZG;  Lv, XQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: pengjin@red.semi.ac.cn
Adobe PDF(874Kb)  |  Favorite  |  View/Download:1219/540  |  Submit date:2010/05/24
Light-emitting-diodes  Nm Tuning Range  Superluminescent Diodes  Well Laser  Emission  Spectroscopy  Spectrum  
Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 1, 页码: 012003-1-012003-5
Authors:  Peng Yinsheng;  Ye Xiaoling;  Xu Bo;  Jin Peng;  Niu Jiebin;  Jia Rui;  Wang Zhanguo
Adobe PDF(351Kb)  |  Favorite  |  View/Download:1265/311  |  Submit date:2011/08/16
Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 16, 页码: Art. No. 163301
Authors:  Yang AL;  Song HP;  Wei HY;  Liu XL;  Wang J;  Lv XQ;  Jin P;  Yang SY;  Zhu QS;  Wang ZG;  Yang AL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: alyang@semi.ac.cn;  xlliu@semi.ac.cn
Adobe PDF(278Kb)  |  Favorite  |  View/Download:1281/529  |  Submit date:2010/03/08
Conduction Bands  Iii-v Semiconductors  Ii-vi Semiconductors  Indium Compounds  Interface States  Polarisation  Semiconductor Heterojunctions  Valence Bands  Wide Band Gap Semiconductors  X-ray Photoelectron Spectra  Zinc Compounds  
Temperature Insensitivity of Optical Properties of InAs/GaAs Quantum Dots due to a Pregrown InGaAs Quantum Well 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 1, 页码: Art. No. 017802
Authors:  Liang ZM;  Jin C;  Jin P;  Wu J;  Wang ZG;  Liang ZM Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: lzhm4321@red.semi.ac.cn
Adobe PDF(342Kb)  |  Favorite  |  View/Download:1041/317  |  Submit date:2010/03/08
Excitation Dependence  Line-shape  Photoluminescence  Deposition  Heterostructures  Epitaxy