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InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 2, 页码: 28102
Authors:  Li, XK;  Liang, DC;  Jin, P;  An, Q;  Wei, H;  Wu, J;  Wang, ZG
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Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 10, 页码: 108503
Authors:  Liang, DC;  An, Q;  Jin, P;  Li, XK;  Wei, H;  Wu, J;  Wang, ZG;  Jin, P (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China,pengjin@red.semi.ac.cn
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Inalgaas Quantum Dot  Superluminescent Diode  Optical Coherence Tomography  Short Wavelength  Optical Coherence Tomography  Resolution  
A Photovoltaic InAs Quantum-Dot Infrared Photodetector 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 4, 页码: Art. No. 047801
Authors:  Tang GH (Tang Guang-Hua);  Xu B (Xu Bo);  Jiang;  LW (Jiang Li-Wen);  Kong JX (Kong Jin-Xia);  Kong;  N (Kong Ning);  Liang DC (Liang De-Chun);  Liang P (Liang Ping);  Ye XL (Ye Xiao-Ling);  Jin P (Jin Peng);  Liu FQ (Liu Feng-Qi);  Chen YH (Chen Yong-Hai);  Wang ZG (Wang Zhan-Guo);  Tang, GH, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: tghsugar@semi.ac.cn
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Mu-m  Temperature  Detectors  Operation  
Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 15, 页码: Art. No. 151904
Authors:  Yang AL;  Song HP;  Liang DC;  Wei HY;  Liu XL;  Jin P;  Qin XB;  Yang SY;  Zhu QS;  Wang ZG;  Yang, AL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: alyang@semi.ac.cn;  xlliu@semi.ac.cn
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Alloying  Annealing  Electrical Conductivity  Excitons  Ii-vi Semiconductors  Magnesium Compounds  Mocvd Coatings  Photoluminescence  Positron Annihilation  Semiconductor Thin Films  Vacancies (Crystal)  Wide Band Gap Semiconductors  Zinc Compounds  Semiconductors  Emission  Origin  Diodes  
多孔硅的孔隙对硫化锌/多孑L硅光电性质的影响 期刊论文
激光技术, 2010, 卷号: 34, 期号: 6, 页码: 766-769
Authors:  王彩凤;  李清山;  胡波;  梁德春
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退火温度对ZnS/PS薄膜的晶体结构和光电性质的影响 期刊论文
光电子·激光, 2010, 卷号: 21, 期号: 12, 页码: 1805-1808
Authors:  王彩凤;  李清山;  胡波;  梁德春
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Effect of silver growth temperature on the contacts between Ag and ZnO thin films 期刊论文
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2009, 卷号: 52, 期号: 9, 页码: 2779-2784
Authors:  Li XK;  Li QS;  Liang DC;  Xu YD;  Xie XJ;  Li XK Qufu Normal Univ Coll Phys & Engn Qufu 273165 Peoples R China. E-mail Address: phylxk@163.com
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Zno  Schottky Barrier  Interface  Msm Structure  
Ag生长温度对Ag/ZnO肖特基接触特性的影响 期刊论文
中国科学. E辑,技术科学, 2009, 卷号: 39, 期号: 7, 页码: 1269-1274
Authors:  李新坤;  李清山;  梁德春;  徐言东;  谢小军
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聚光太阳电池的制作方法 专利
专利类型: 发明, 申请日期: 2006-08-30, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈诺夫;  白一鸣;  王晓晖;  梁平;  陆大成
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P型GaN和AlGaN外延材料的制备 期刊论文
高技术通讯, 2000, 卷号: 10, 期号: 8, 页码: 26
Authors:  刘祥林;  王成新;  韩培德;  陆大成;  王晓晖;  汪度;  王良臣
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