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半导体耦合腔激光器及光信号处理研究 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2019
Authors:  王福丽
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Broadband multi-wavelength Brillouin lasers with an operating wavelength range of 1500–1600 nm generated by four-wave mixing in a dual wavelength Brillouin fiber laser cavity 期刊论文
LASER PHYSICS LETTERS, 2018, 卷号: 15, 期号: 5, 页码: 055103
Authors:  Q Li ;   Z X Jia ;   H Z Weng ;   Z R Li ;   Y D Yang ;   J L Xiao ;   S W Chen ;   Y Z Huang ;   W P Qin ;   G S Qin
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含铟GaN基HEMT结构的理论模拟及场板影响研究 学位论文
, 北京: 中国科学院研究生院, 2017
Authors:  李巍
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氮化镓  铟铝氮  高电子迁移率晶体管  二维电子气  电流崩塌  
大功率波长稳定激光器一级光栅的制备 学位论文
, 北京: 中国科学院研究生院, 2017
Authors:  王海丽
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Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文
AIP Advances, 2017, 卷号: 7, 页码: 035103
Authors:  P. Chen;  D. G. Zhao;  D. S. Jiang;  H. Long;  M. Li;  J. Yang;  J. J. Zhu;  Z. S. Liu;  X. J. Li;  W. Liu;  X. Li;  F. Liang;  J. P. Liu;  B. S. Zhang;  H. Yang
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Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
Authors:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN;  J. J. ZHU;  J. YANG;  W. LIU;  X. G. HE;  X. J. LI;  F. LIANG;  S. T. LIU;  Y. XING;  L. Q. ZHANG;  M. LI;  J. ZHANG
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Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文
Scientific Reports, 2017, 卷号: 7, 页码: 44850
Authors:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu;  Z. S. Liu;  W. Liu;  X. Li;  F. Liang;  S. T. Liu;  L. Q. Zhang;  H. Yang
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基于选区外延技术的单片集成阵列波导光栅与单载流子探测器的端对接设计 期刊论文
Acta Physica Sinica, 2017, 卷号: 66, 页码: 158502
Authors:  叶焓;  韩勤;  吕倩倩;  潘盼;  安俊明;  王玉冰;  刘荣瑞;  侯丽丽
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Different annealing temperature suitable for different Mg doped P-GaN 期刊论文
Superlattices and Microstructures, 2017, 卷号: 104, 期号: 2017, 页码: 63-68
Authors:  S.T. Liu;  J. Yang;  D.G. Zhao;  D.S. Jiang;  F. Liang;  P. Chen;  J.J. Zhu;  Z.S. Liu;  X. Li;  W. Liu;  L.Q. Zhang;  H. Long;  M. Li
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Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3 期刊论文
Superlattices and Microstructures, 2017, 卷号: 102, 期号: 2017, 页码: 35-39
Authors:  J. Yang;  D.G. Zhao;  D.S. Jiang;  P. Chen;  J.J. Zhu;  Z.S. Liu;  W. Liu;  F. Liang;  X. Li;  S.T. Liu;  L.Q. Zhang;  H. Yang
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