SEMI OpenIR
(Note: the search results are based on claimed items)

Browse/Search Results:  1-9 of 9 Help

Filters            
Selected(0)Clear Items/Page:    Sort:
Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 2, 页码: Article no.27801
Authors:  Yang XR;  Xu B;  Wang HF;  Zhao GQ;  Shi SH;  Shen XZ;  Li JF;  Wang ZG;  Yang, XR, Handan Coll, Dept Phys & Elect Engn, Handan 056005, Peoples R China. yangxr1976@126.com
Adobe PDF(483Kb)  |  Favorite  |  View/Download:1460/327  |  Submit date:2011/07/05
Continuous-wave Operation  Emission  Lasers  Wavelength  Excitons  Energy  
Electronic energy levels in an asymmetric quantum-dots-in-a-well structure for infrared photodetectors 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 7, 页码: 2645-2648
Authors:  Wang ZC;  Xu B;  Chen YH;  Shi LW;  Liang ZM;  Wang ZG;  Wang, ZG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangzc@semi.ac.cn
Adobe PDF(153Kb)  |  Favorite  |  View/Download:1092/232  |  Submit date:2010/03/08
Absorption  
Modulation spectroscopy of GaAs covered by InAs quantum dots 期刊论文
CHINESE PHYSICS LETTERS, 2002, 卷号: 19, 期号: 7, 页码: 1010-1012
Authors:  Jin P;  Meng XQ;  Zhang ZY;  Li CM;  Qu SC;  Xu B;  Liu FQ;  Wang ZG;  Li YG;  Zhang CZ;  Pan SH;  Jin P,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(255Kb)  |  Favorite  |  View/Download:904/326  |  Submit date:2010/08/12
Franz-keldysh Oscillations  Microscopy  Surfaces  Islands  Layer  
Structure and photoluminescence of InGaAs quantum dots formed on an InAlAs wetting layer 期刊论文
CHINESE PHYSICS LETTERS, 2001, 卷号: 18, 期号: 10, 页码: 1411-1414
Authors:  Zhang YC;  Huang CJ;  Ye XL;  Xu B;  Ding D;  Wang JZ;  Li YF;  Liu FQ;  Wang ZG;  Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(395Kb)  |  Favorite  |  View/Download:1067/456  |  Submit date:2010/08/12
Temperature-dependence  Carrier Transfer  Lasers  Gain  
Unusual temperature-dependent optical properties of self-organized InAs/GaAs quantum dots at high excitation power 期刊论文
CHINESE PHYSICS LETTERS, 2001, 卷号: 18, 期号: 7, 页码: 982-985
Authors:  Wei YQ;  Liu HY;  Chai CL;  Xu B;  Ding D;  Wang ZG;  Wei YQ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(687Kb)  |  Favorite  |  View/Download:812/252  |  Submit date:2010/08/12
Energy Relaxation  Emission  Lasers  
Red luminescence from self-assembled InAlAs AlGaAs quantum dots with bimodal size distribution 期刊论文
CHINESE PHYSICS LETTERS, 1999, 卷号: 16, 期号: 4, 页码: 298-300
Authors:  Zhou W;  Xu B;  Xu HZ;  Liu FQ;  Gong Q;  Jiang WH;  Sun ZZ;  Ding D;  Liang JB;  Wang ZG;  Zhu ZM;  Li GH;  Zhou W,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(320Kb)  |  Favorite  |  View/Download:807/218  |  Submit date:2010/08/12
Photoluminescence  Ge  Temperature  Ensembles  Si(100)  Growth  Shape  
Lateral ordered InGaAs self-organized quantum dots grown on (311) GaAs by conventional molecular beam epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 1999, 卷号: 16, 期号: 1, 页码: 68-70
Authors:  Xu HZ;  Jiang WH;  Xu B;  Zhou W;  Wang ZG;  Xu HZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(354Kb)  |  Favorite  |  View/Download:660/194  |  Submit date:2010/08/12
Alignment  Surfaces  
Observation of the third subband population in modulation-doped InGaAs/InAlAs heterostructure 期刊论文
CHINESE PHYSICS LETTERS, 1998, 卷号: 15, 期号: 1, 页码: 57-59
Authors:  Li HX;  Wang ZG;  Liang JB;  Xu B;  Lu M;  Wu J;  Gong Q;  Jiang C;  Liu FQ;  Zhou W;  Li HX,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(231Kb)  |  Favorite  |  View/Download:817/234  |  Submit date:2010/08/12
Multiple-quantum Wells  Photoluminescence Spectroscopy  Transistor Structures  Electron  Temperature  Density  
Asymmetry in the vertically aligned growth induced InAs islands in GaAs 期刊论文
CHINESE PHYSICS LETTERS, 1998, 卷号: 15, 期号: 7, 页码: 519-521
Authors:  Gong Q;  Wu J;  Xu B;  Liang JB;  Fan TW;  Wang ZG;  Bai YQ;  Gong Q,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(383Kb)  |  Favorite  |  View/Download:730/195  |  Submit date:2010/08/12
Molecular-beam Epitaxy  Quantum Dots  Gaas(100)  Photoluminescence  Stage