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The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 7, 页码: Article no.71914
Authors:  Zhou GY;  Chen YH;  Yu JL;  Zhou XL;  Ye XL;  Jin P;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
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Spectroscopy  
A Photovoltaic InAs Quantum-Dot Infrared Photodetector 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 4, 页码: Art. No. 047801
Authors:  Tang GH (Tang Guang-Hua);  Xu B (Xu Bo);  Jiang;  LW (Jiang Li-Wen);  Kong JX (Kong Jin-Xia);  Kong;  N (Kong Ning);  Liang DC (Liang De-Chun);  Liang P (Liang Ping);  Ye XL (Ye Xiao-Ling);  Jin P (Jin Peng);  Liu FQ (Liu Feng-Qi);  Chen YH (Chen Yong-Hai);  Wang ZG (Wang Zhan-Guo);  Tang, GH, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: tghsugar@semi.ac.cn
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Mu-m  Temperature  Detectors  Operation  
Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 15, 页码: Art. No. 151904
Authors:  Yang AL;  Song HP;  Liang DC;  Wei HY;  Liu XL;  Jin P;  Qin XB;  Yang SY;  Zhu QS;  Wang ZG;  Yang, AL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: alyang@semi.ac.cn;  xlliu@semi.ac.cn
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Alloying  Annealing  Electrical Conductivity  Excitons  Ii-vi Semiconductors  Magnesium Compounds  Mocvd Coatings  Photoluminescence  Positron Annihilation  Semiconductor Thin Films  Vacancies (Crystal)  Wide Band Gap Semiconductors  Zinc Compounds  Semiconductors  Emission  Origin  Diodes  
The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 8, 页码: Art. No. 083513
Authors:  Zhou GY (Zhou G. Y.);  Chen YH (Chen Y. H.);  Tang CG (Tang C. G.);  Liang LY (Liang L. Y.);  Jin P (Jin P.);  Wang ZG (Wang Z. G.);  Zhou, GY, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
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Quantum-dot System  Island Formation  In-situ  Evolution  Gaas  Photoluminescence  
Broadband external cavity tunable quantum dot lasers with low injection current density 期刊论文
OPTICS EXPRESS, 2010, 卷号: 18, 期号: 9, 页码: 8916-8922
Authors:  Lv XQ;  Jin P;  Wang WY;  Wang ZG;  Lv, XQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: pengjin@red.semi.ac.cn
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Light-emitting-diodes  Nm Tuning Range  Superluminescent Diodes  Well Laser  Emission  Spectroscopy  Spectrum  
Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 16, 页码: Art. No. 163301
Authors:  Yang AL;  Song HP;  Wei HY;  Liu XL;  Wang J;  Lv XQ;  Jin P;  Yang SY;  Zhu QS;  Wang ZG;  Yang AL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: alyang@semi.ac.cn;  xlliu@semi.ac.cn
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Conduction Bands  Iii-v Semiconductors  Ii-vi Semiconductors  Indium Compounds  Interface States  Polarisation  Semiconductor Heterojunctions  Valence Bands  Wide Band Gap Semiconductors  X-ray Photoelectron Spectra  Zinc Compounds  
Temperature Insensitivity of Optical Properties of InAs/GaAs Quantum Dots due to a Pregrown InGaAs Quantum Well 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 1, 页码: Art. No. 017802
Authors:  Liang ZM;  Jin C;  Jin P;  Wu J;  Wang ZG;  Liang ZM Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: lzhm4321@red.semi.ac.cn
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Excitation Dependence  Line-shape  Photoluminescence  Deposition  Heterostructures  Epitaxy  
Valence band offset of ZnO/GaAs heterojunction measured by x-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 92, 期号: 1, 页码: Art. No. 012104
Authors:  Zhang, PF;  Liu, XL;  Zhang, RQ;  Fan, HB;  Yang, AL;  Wei, HY;  Jin, P;  Yang, SY;  Zhu, QS;  Wang, ZG;  Zhang, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhangpanf@semi.ac.cn;  xlliu@semi.ac.cn
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Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
Authors:  Liang, LY;  Ye, XL;  Jin, P;  Chen, YH;  Wang, ZG;  Liang, LY, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
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Induced Refractive-index  Growth  Lasers  Gaas  
Rapid thermal annealing properties of ZnO films grown using methanol as oxidant 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 卷号: 40, 期号: 19, 页码: 6010-6013
Authors:  Zhang PF (Zhang, P. F.);  Liu XL (Liu, X. L.);  Wei HY (Wei, H. Y.);  Fan HB (Fan, H. B.);  Liang ZM (Liang, Z. M.);  Jin P (Jin, P.);  Yang SY (Yang, S. Y.);  Jiao CM (Jiao, C. M.);  Zhu QS (Zhu, Q. S.);  Wang ZG (Wang, Z. G.);  Zhang, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhangpanf@semi.ac.cn;  xlliu@semi.ac.cn
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Chemical-vapor-deposition