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Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 卷号: 509, 期号: 3, 页码: 748-750
Authors:  Deng Y;  Zhao DG;  Le LC;  Jiang DS;  Wu LL;  Zhu JJ;  Wang H;  Liu ZS;  Zhang SM;  Yang H;  Liang JW;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
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Nitride Materials  Crystal Growth  Composition Fluctuations  X-ray Diffraction  Layer  
Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.84339
Authors:  Zhu JH;  Wang LJ;  Zhang SM;  Wang H;  Zhao DG;  Zhu JJ;  Liu ZS;  Jiang DS;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
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The investigation on carrier distribution in InGaN/GaN multiple quantum well layers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.93117
Authors:  Zhu JH;  Zhang SM;  Wang H;  Zhao DG;  Zhu JJ;  Liu ZS;  Jiang DS;  Qiu YX;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
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Diodes  Efficiency  
Ferromagnetic modification of GaN film by Cu+ ions implantation 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 卷号: 268, 期号: 2, 页码: 123-126
Authors:  Zhang B;  Chen CC;  Yang C;  Wang JZ;  Shi LQ;  Cheng HS;  Zhao DG;  Zhang, B, Fudan Univ, Inst Modern Phys, Appl Ion Beam Phys Lab, Shanghai 200433, Peoples R China. E-mail Address: binzhang@fudan.edu.cn
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Nonmagnetic Element Doped Semiconductor  Cu Ion implantatIon  Gan-based Dms  Pixe Analysis  Doped Zno  Mn  Cr  
Effects of AlGaN layer parameter on ultraviolet response of n(+)-GaN/i-AlxGa1 (-) N-x/n(+)-GaN structure ultraviolet-infrared photodetector 期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 12, 页码: 8903-8909
Authors:  Deng Y;  Zhao DG;  Wu LL;  Liu ZS;  Zhu JJ;  Jiang DS;  Zhang SM;  Liang JW;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
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Gan  Ultraviolet And Infrared Photodetector  Quantum Efficiency  Solar-blind  
Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector 期刊论文
: JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 卷号: 492, 期号: 1-2, 页码: 300-302
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Wang;  H;  Liu ZS;  Zhang SM;  Yang H;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
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Nitride Materials  Photoconductivity And Photovoltaics  Computer Simulations  Films  
Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 1, 页码: Art. No. 017307
Authors:  Wang LJ;  Zhang SM;  Zhu JH;  Zhu JJ;  Zhao DG;  Liu ZS;  Jiang DS;  Wang YT;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: smzhang@red.semi.ac.cn
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Gan  Light Emitting Diode  Surface Treatment  Leakage Current  Threading Dislocation Densities  Layers  Ni/au  Leds  
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 卷号: 489, 期号: 2, 页码: 461-464
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Wang H;  Liu ZS;  Zhang SM;  Wang YT;  Jia QJ;  Yang H;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
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Nitride Materials  Crystal Growth  X-ray Diffraction  Time-resolved Photoluminescence  Light-emitting-diodes  Piezoelectric Fields  Laser-diodes  Dependence  Recombination  Polarization  Dynamics  Growth  Mocvd  
Time delay in InGaN multiple quantum well laser diodes at room temperature 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 12, 页码: Article no.124211
Authors:  Jin LA;  Jiang DS;  Zhang ZM;  Liu ZS;  Zeng C;  Zhao DG;  Zhu JJ;  Wang H;  Duan LH;  Yang H;  Jin, LA, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. jilian@red.semi.ac.cn
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Ingan  Laser Diode  Delay Effect  Saturable Absorber  Traps  Light Emission  
First principle study of Mg, Si and Mn co-doped GaN 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 1, 页码: 450-458
Authors:  Xing HY;  Fan GH;  Zhang Y;  Zhao DG;  Fan GH S China Normal Univ Inst Optoelect Mat & Technol Guangzhou 510631 Guangdong Peoples R China. E-mail Address: hy.xing@yahoo.com.cn;  gfan@scnu.edu.cn
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Mg Si And Mn Co-doped Gan  Electronic Structure  T-c  Optical Properties