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An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells
Zhao DG; Jiang DS; Zhu JJ; Wang H; Liu ZS; Zhang SM; Wang YT; Jia QJ; Yang H; Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
2010
Source PublicationJOURNAL OF ALLOYS AND COMPOUNDS
Volume489Issue:2Pages:461-464
AbstractThe influence of well thickness on the electroluminescence (EL) of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition is investigated. It is found that the peak wavelength of EL increases with the increase of well thickness when the latter is located in the range of 3.0-5.1 nm. The redshift is mainly attributed to the quantum confined Stark effect (QCSE). As a contrast, it is found that the EL intensity of InGaN/GaN MQWs increases with the increase of well thickness in spite of QCSE. The result of X-ray diffraction demonstrates that the interface become smoother with the increase of well thickness and suggests that the reduced interface roughness can be an important factor leading to the increase of EL intensity of InGaN/GaN MQWs. (C) 2009 Elsevier B.V. All rights reserved.
metadata_24国内
KeywordNitride Materials Crystal Growth X-ray Diffraction Time-resolved Photoluminescence Light-emitting-diodes Piezoelectric Fields Laser-diodes Dependence Recombination Polarization Dynamics Growth Mocvd
Subject Area光电子学
Funding OrganizationNational Natural Science Foundation of China 60836003 60776047 60506001 60476021 60576003; National Science Fund for Distinguished Young Scholars 60925017; National Basic Research Program of China 2007CB936700; National High Technology Research and Development Program of China 2007AA03Z401
Indexed BySCI
Language英语
Date Available2010-04-04
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/10205
Collection集成光电子学国家重点实验室
Corresponding AuthorZhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
Recommended Citation
GB/T 7714
Zhao DG,Jiang DS,Zhu JJ,et al. An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2010,489(2):461-464.
APA Zhao DG.,Jiang DS.,Zhu JJ.,Wang H.,Liu ZS.,...&Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn.(2010).An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells.JOURNAL OF ALLOYS AND COMPOUNDS,489(2),461-464.
MLA Zhao DG,et al."An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells".JOURNAL OF ALLOYS AND COMPOUNDS 489.2(2010):461-464.
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