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Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 卷号: 540, 页码: 46-48
Authors:  Zhao DG (Zhao, D. G.);  Jiang DS (Jiang, D. S.);  Le LC (Le, L. C.);  Wu LL (Wu, L. L.);  Li L (Li, L.);  Zhu JJ (Zhu, J. J.);  Wang H (Wang, H.);  Liu ZS (Liu, Z. S.);  Zhang SM (Zhang, S. M.);  Jia QJ (Jia, Q. J.);  Yang H (Yang, Hui)
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An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 卷号: 489, 期号: 2, 页码: 461-464
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Wang H;  Liu ZS;  Zhang SM;  Wang YT;  Jia QJ;  Yang H;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
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Nitride Materials  Crystal Growth  X-ray Diffraction  Time-resolved Photoluminescence  Light-emitting-diodes  Piezoelectric Fields  Laser-diodes  Dependence  Recombination  Polarization  Dynamics  Growth  Mocvd  
Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 1, 页码: Art. No. 013911
Authors:  Lu J;  Meng HJ;  Deng JJ;  Xu PF;  Chen L;  Zhao JH;  Jia QJ;  Zhao JH Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China. E-mail Address: jhzhao@red.semi.ac.cn
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Annealing  Gallium Arsenide  Iron  Magnetic Anisotropy  Magnetic Epitaxial Layers  Magnetisation  Molecular Beam Epitaxial Growth  Transmission Electron Microscopy  X-ray Diffraction  
Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 卷号: 205, 期号: 2, 页码: 294-299
Authors:  Wu, JJ;  Zhao, LB;  Zhang, GY;  Liu, XL;  Zhu, QS;  Wang, ZG;  Jia, QJ;  Guo, LP;  Hu, TD;  Wu, JJ, Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Res Ctr Wide Gap Semicond, Beijing 100871, Peoples R China. 电子邮箱地址: jiejunw@red.semi.ac.cn
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Chemical-vapor-deposition  Temperature Aln Interlayers  Phase Epitaxy  Optical-properties  Surfactant  Substrate  Stress  Si  Reduction  Sapphire  
Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111) 期刊论文
NANOTECHNOLOGY, 2007, 卷号: 18, 期号: 1, 页码: Art.No.015402
Authors:  Wu JJ (Wu Jiejun);  Zhang GY (Zhang Guoyi);  Liu XL (Liu Xianglin);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang Zhanguo);  Jia QJ (Jia Quanjie);  Guo LP (Guo Liping);  Wu, JJ, Peking Univ, Res Ctr Wide Gap Semicond, State Key Lab Artificial Microstruct & Mesoscop, Sch Phys, Beijing 100871, Peoples R China. 电子邮箱地址: jiejunw@red.semi.ac.cn
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Chemical-vapor-deposition  
Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文
OPTICAL MATERIALS, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231
Authors:  Wu JJ (Wu Jiejun);  Han XX (Han Xiuxun);  Li JM (Li Jiemin);  Wei HY (Wei Hongyuan);  Cong GW (Cong Guangwei);  Liu XL (Liu Xianglin);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang Zhanguo);  Jia QJ (Jia Quanjie);  Guo LP (Guo Liping);  Hu TD (Hu Tiandou);  Wang HH (Wang Huanhua);  Wu, JJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: jiejunw@red.semi.ac.cn
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In dopIng  Cracks  Si(111) Substrate  Lt-algan Interlayer  Metalorganic Chemical Vapor Deposition  Gan  Phase Epitaxy  Indium-surfactant  Optical-properties  Si(111)  Stress  Films  
Growth and magnetic properties of zincblende CrSb epilayers on relaxed and strained (In, Ga)As buffers 期刊论文
CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 2, 页码: 493-496
Authors:  Deng JJ;  Zhao JH;  Bi JF;  Zheng YH;  Jia QJ;  Niu ZC;  Wu XG;  Zheng HZ;  Zhao, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail: jhzhao@red.semi.ac.cn
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Room-temperature Ferromagnetism  Molecular-beam Epitaxy  Multilayer  Cras  
Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells 期刊论文
APPLIED SURFACE SCIENCE, 2006, 卷号: 252, 期号: 8, 页码: 3043-3050
Authors:  Sun Q;  Zhang JC;  Huang Y;  Chen J;  Wang JF;  Wang H;  Li DY;  Wang YT;  Zhang SM;  Yang H;  Zhou CL;  Guo LP;  Jia QJ;  Sun, Q, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail: qsun@red.semi.ac.cn
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Nitrides  Multiple Quantum Wells  Cracks  Dislocations  Vacancies X-ray Diffraction  X-ray-diffraction  Edge Dislocations  Gan  Films  Superlattices  Relaxation  Strain  
Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates 期刊论文
NANOTECHNOLOGY, 2006, 卷号: 17, 期号: 5, 页码: 1251-1254
Authors:  Wu JJ;  Li JM;  Cong GW;  Wei HY;  Zhang PF;  Hu WG;  Liu XL;  Zhu QS;  Wang ZG;  Jia QJ;  Gu LP;  Wu, JJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: jiejunw@red.semi.ac.cn
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Optical-properties  Raman-scattering  Epilayers  Luminescence  Alingan  Phonon  Layers  Films  Aln  Gan  
Room-temperature ferromagnetism in zinc-blende and deformed CrAs thin films 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 14, 页码: Art.No.142509
Authors:  Bi JF;  Zhao JH;  Deng JJ;  Zheng YH;  Li SS;  Wu XG;  Jia QJ;  Zhao, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail: jhzhao@red.semi.ac.cn
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Molecular-beam Epitaxy  Multilayer  Absorption  Gaas  Crsb