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高能量储存密度介电材料的研究 学位论文
, 北京: 中国科学院研究生院, 2018
Authors:  汪晨琛
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Plasmonic Polymer Tandem Solar Cell 期刊论文
ACS NANO, 2011, 卷号: 5, 期号: 8, 页码: 6210-6217
Authors:  Yang J;  You JB;  Chen CC;  Hsu WC;  Tan HR;  Zhang XW;  Hong ZR;  Yang Y;  Yang, J (reprint author), Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA. yangy@ucla.edu
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Photovoltaic Cells  Absorption Enhancement  Self-organization  Efficiency  Nanoclusters  Fluorescence  Resonance  Design  Blends  
Growth and device characteristics of nano-folding InGaN/GaN multiple quantum well LED 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 7, 页码: 76104
Authors:  Chen GF;  Tan XD;  Wan WT;  Shen J;  Hao QY;  Tang CC;  Zhu JJ;  Liu ZS;  Zhao DG;  Zhang SM;  Zhu, JJ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China, admat@hebut.edu.cn
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Arrays  
纳米折叠InGaN/GaN LED材料生长及器件特性 期刊论文
物理学报, 2011, 卷号: 60, 期号: 7, 页码: 076104-1-076104-4
Authors:  陈贵锋;  谭小动;  万尾甜;  沈俊;  郝秋艳;  唐成春;  朱建军;  刘宗顺;  赵德刚;  张书明
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Ferromagnetic modification of GaN film by Cu+ ions implantation 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 卷号: 268, 期号: 2, 页码: 123-126
Authors:  Zhang B;  Chen CC;  Yang C;  Wang JZ;  Shi LQ;  Cheng HS;  Zhao DG;  Zhang, B, Fudan Univ, Inst Modern Phys, Appl Ion Beam Phys Lab, Shanghai 200433, Peoples R China. E-mail Address: binzhang@fudan.edu.cn
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Nonmagnetic Element Doped Semiconductor  Cu Ion implantatIon  Gan-based Dms  Pixe Analysis  Doped Zno  Mn  Cr  
Effect of growth conditions on the GaN thin film by sputtering deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 299, 期号: 2, 页码: 268-271
Authors:  Zhang CG;  Bian LF;  Chen WD;  Hsu CC;  Zhang, CG, Chinese Acad Sci, Inst Semicond, State Key Lab Surf Phys, Beijing 100083, Peoples R China. 电子邮箱地址: zhangcg@semi.ac.cn
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Phase Equilibria  
Photoluminescence from Er-doped Si-in-SiNx thin films 期刊论文
OPTICAL MATERIALS, 2007, 卷号: 29, 期号: 8, 页码: 1071-1074
Authors:  Bian LF;  Zhang CG;  Chen WD;  Hsu CC;  Ma LB;  Song R;  Cao ZX;  Bian, LF, Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China. 电子邮箱地址: guobian@semi.ac.cn
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Photoluminescence  
Deep level and photoluminescence studies of Er-implanted GaN films 期刊论文
JOURNAL OF LUMINESCENCE, 2007, 卷号: 122 Sp.Iss.SI, 期号: 0, 页码: 365-367
Authors:  Song SF;  Chen WD;  Hsu CC;  Xu XR;  Song, SF, Beijing Univ, Minist Educ, Key Lab Luminescence & Opt Informat, Inst Optoelect Technol, Beijing 100044, Peoples R China. 电子邮箱地址: sfsong@center.njtu.edu.cn;  xrxu@center.njtu.edu.cn
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Gan  
Effects of ZnO interlayers on thick GaN/Si film prepared by RF magnetron sputtering 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 293, 期号: 2, 页码: 258-262
Authors:  Zhang CG;  Blan LF;  Chen WD;  Hsu CC;  Zhang, CG, Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, POB 912, Beijing 100083, Peoples R China. E-mail: zhangcg@semi.ac.cn
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Radio-frequency Magnetron Sputtering  
PIXE analysis of Fe content in Fe-implanted GaN film 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 卷号: 252, 期号: 2, 页码: 225-229
Authors:  Zhang B;  Shi LQ;  Chen CC;  Zhao DG;  Zhang, B, Fudan Univ, Inst Modern Phys, Shanghai 200433, Peoples R China. 电子邮箱地址: binzhang@fudan.edu.cn
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Pixe