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Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition
Deng Y; Zhao DG; Le LC; Jiang DS; Wu LL; Zhu JJ; Wang H; Liu ZS; Zhang SM; Yang H; Liang JW; Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
2011
Source PublicationJOURNAL OF ALLOYS AND COMPOUNDS
ISSN0925-8388
Volume509Issue:3Pages:748-750
metadata_83[deng, y.; zhao, d. g.; le, l. c.; jiang, d. s.; wu, l. l.; zhu, j. j.; wang, h.; liu, z. s.; zhang, s. m.; yang, hui; liang, j. w.] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; [yang, hui] chinese acad sci, suzhou inst nanotech & nanobion, suzhou 215125, peoples r china
KeywordNitride Materials Crystal Growth Composition Fluctuations X-ray Diffraction Layer
Subject Area光电子学
Funding OrganizationNational Science Fund for Distinguished Young Scholars [60925017]; National Natural Science Foundation of China [10990100, 60836003, 60776047]; National Basic Research Program of China [2007CB936700]; National High Technology Research and Development Program of China [2007AA032401]; Chinese Academy of Sciences [ISCAS2009T05O9S4050000]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21029
Collection集成光电子学国家重点实验室
Corresponding AuthorZhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
Recommended Citation
GB/T 7714
Deng Y,Zhao DG,Le LC,et al. Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2011,509(3):748-750.
APA Deng Y.,Zhao DG.,Le LC.,Jiang DS.,Wu LL.,...&Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn.(2011).Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition.JOURNAL OF ALLOYS AND COMPOUNDS,509(3),748-750.
MLA Deng Y,et al."Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition".JOURNAL OF ALLOYS AND COMPOUNDS 509.3(2011):748-750.
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