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Surface-plasmon-polariton whispering-gallery mode analysis of the graphene monolayer coated InGaAs nanowire cavity 期刊论文
OPTICS EXPRESS, 2014, 卷号: 22, 期号: 5, 页码: 5754-5761
Authors:  Zhao, J;  Liu, XH;  Qiu, WB;  Ma, YH;  Huang, YX;  Wang, JX;  Qiang, K;  Pan, JQ
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Investigation of plasmonic whispering-gallery mode characteristics for graphene monolayer coated dielectric nanodisks 期刊论文
OPTICS LETTERS, 2014, 卷号: 39, 期号: 19, 页码: 5527-5530
Authors:  Zhao, J;  Qiu, WB;  Huang, YX;  Wang, JX;  Kan, Q;  Pan, JQ
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The investigation on carrier distribution in InGaN/GaN multiple quantum well layers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.93117
Authors:  Zhu JH;  Zhang SM;  Wang H;  Zhao DG;  Zhu JJ;  Liu ZS;  Jiang DS;  Qiu YX;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
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Diodes  Efficiency  
A practical route towards fabricating GaN nanowire arrays 期刊论文
CRYSTENGCOMM, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Authors:  Liu, JQ;  Huang, J;  Gong, XJ;  Wang, JF;  Xu, K;  Qiu, YX;  Cai, DM;  Zhou, TF;  Ren, GQ;  Yang, H;  Xu, K (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China,
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Light-emitting-diodes  Epitaxial Lateral Overgrowth  Chemical-vapor-deposition  Well Nanorod Arrays  Ultraviolet-light  Growth  Nanogenerators  Dislocations  Brightness  Layers  
Structure, Stress State and Piezoelectric Property of GaN Nanopyramid Arrays 期刊论文
APPLIED PHYSICS EXPRESS, 2011, 卷号: 4, 期号: 4, 页码: Article no.45001
Authors:  Liu JQ;  Wang JF;  Gong XJ;  Huang J;  Xu K;  Zhou TF;  Zhong HJ;  Qiu YX;  Cai DM;  Ren GQ;  Yang H;  Xu, K, Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.
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Output Voltage  Nanowires  Nanogenerators  Growth  
Analysis of Modified Williamson-Hall Plots on GaN Layers 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 1, 页码: Article no.16101
Authors:  Liu JQ;  Qiu YX;  Wang JF;  Xu K;  Yang H;  Liu, JQ, Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China.
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X-ray-diffraction  Thin-films  Growth  
Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 7, 页码: Art. No. 076804
Authors:  Guo X (Guo Xi);  Wang YT (Wang Yu-Tian);  Zhao DG (Zhao De-Gang);  Jiang DS (Jiang De-Sheng);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Wang H (Wang Hui);  Zhang SM (Zhang Shu-Ming);  Qiu YX (Qiu Yong-Xin);  Xu K (Xu Ke);  Yang H (Yang Hui);  Guo, X, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址:
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In-plane Grazing Incidence X-ray Diffraction  Gallium Nitride  Mosaic Structure  Biaxial Strain  Chemical-vapor-deposition  Lattice-constants  Aln  
Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties 期刊论文
PHYSICA B-CONDENSED MATTER, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672
Authors:  Wang H (Wang H.);  Jiang DS (Jiang D. S.);  Jahn U (Jahn U.);  Zhu JJ (Zhu J. J.);  Zhao DG (Zhao D. G.);  Liu ZS (Liu Z. S.);  Zhang SM (Zhang S. M.);  Qiu YX (Qiu Y. X.);  Yang H (Yang H.);  Wang, H, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Ingan  Dislocation  Metalorganic Chemical Vapor Deposition  High Resolution X-ray Diffraction  Cathodoluminescence  Misfit Dislocations  Quantum-wells  Band-gap  Epilayers  Generation  Alloys  Inn  
The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 23, 页码: Art.No.235104
Authors:  Zhu, JH (Zhu, J. H.);  Wang, LJ (Wang, L. J.);  Zhang, SM (Zhang, S. M.);  Wang, H (Wang, H.);  Zhao, DG (Zhao, D. G.);  Zhu, JJ (Zhu, J. J.);  Liu, ZS (Liu, Z. S.);  Jiang, DS (Jiang, D. S.);  Qiu, YX (Qiu, Y. X.);  Yang, H (Yang, H.);  Zhu, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Multiple-quantum Wells  
Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 9, 页码: Art. No. 094903
Authors:  Li MC;  Qiu YX;  Liu GJ;  Wang YT;  Zhang BS;  Zhao LC;  Li MC Harbin Inst Technol Sch Mat Sci & Engn POB 405 Harbin 150001 Peoples R China. E-mail Address:
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X-ray-diffraction  Molecular-beam-epitaxy  Films  Misfit