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Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector
Zhao DG; Jiang DS; Zhu JJ; Wang; H; Liu ZS; Zhang SM; Yang H; Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
2010
Source Publication: JOURNAL OF ALLOYS AND COMPOUNDS
Volume492Issue:1-2Pages:300-302
AbstractA new method to test the hole concentration of p-type GaN is proposed, which is carried out by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector. It is shown that the spectral response of the photodetector changes considerably with reversed bias. It is found that the difference between photodetector's quantum efficiency at two wavelengths, i.e. 250 and 361 nm, varies remarkably with increasing reversed bias. According to the simulation calculation, the most characteristic change occurs at a reversed voltage under which the p-GaN layer starts to be completely depleted. Based on this effect the carrier concentration of p-GaN can be derived.
metadata_24其它
KeywordNitride Materials Photoconductivity And Photovoltaics Computer Simulations Films
Subject Area光电子学
Funding OrganizationNational Natural Science Foundation of China 10990100 60836003 60776047;National Science Fund for Distinguished Young Scholars 60925017;National Basic Research Program of China 2007CB936700;National High Technology Research and Development Program of China 2007AA03Z401
Indexed BySCI
Language英语
Date Available2010-04-13
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11142
Collection集成光电子学国家重点实验室
Corresponding AuthorZhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
Recommended Citation
GB/T 7714
Zhao DG,Jiang DS,Zhu JJ,et al. Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector[J]. : JOURNAL OF ALLOYS AND COMPOUNDS,2010,492(1-2):300-302.
APA Zhao DG.,Jiang DS.,Zhu JJ.,Wang.,H.,...&Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn.(2010).Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector.: JOURNAL OF ALLOYS AND COMPOUNDS,492(1-2),300-302.
MLA Zhao DG,et al."Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector".: JOURNAL OF ALLOYS AND COMPOUNDS 492.1-2(2010):300-302.
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