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Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer 期刊论文
Journal of Crystal Growth, 2017, 卷号: 467, 页码: 1-5
Authors:  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu;  Ping Chen;  Jing Yang;  Wei Liu;  Xiang Li;  Shuangtao Liu;  Yao Xing;  Liqun Zhang;  Hui Yang;  Heng Long;  Mo Li
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Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 14, 页码: 4197-4200
Authors:  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu;  Ping Chen;  Jing Yang;  Wei Liu;  Xiang Li;  Shaungtao Liu;  Yao Xing;  Liqun Zhang;  Mo Li;  Jian Zhang
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Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells 期刊论文
IEEE JOURNAL OF PHOTOVOLTAICS, 2017, 卷号: 7, 期号: 4, 页码: 1017-1023
Authors:  Wei Liu;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Dongping Shi;  Zongshun Liu;  Jianjun Zhu;  Jing Yang;  Xiang Li;  Feng Liang;  Shuangtao Liu;  Yao Xing;  Heng Long;  Mo Li
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Comparative study on the InGaN multiple-quantum-well solar cells assisted by capacitance-voltage measurement with additional laser illumination 期刊论文
Journal of Alloys and Compounds, 2017, 卷号: 725, 期号: 2017, 页码: 1130-1135
Authors:  Wei Liu;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Dongping Shi;  Zongshun Liu;  Jianjun Zhu;  Jing Yang;  Xiang Li;  Feng Liang;  Shuangtao Liu;  Yao Xing;  Liqun Zhang;  Mo Li;  Jian Zhang
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Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes 期刊论文
IEEE Photonics Journal, 2017, 卷号: 9, 期号: 2, 页码: 2300108
Authors:  Jing Yang;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Jianjun Zhu;  Zongshun Liu;  Xiang Li;  Feng Liang;  Wei Liu;  Shuangtao Liu;  Liqun Zhang;  Hui Yang;  Jian Zhang;  Mo Li
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New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode 期刊论文
Optics and Laser Technology, 2017, 卷号: 97, 页码: 284–289
Authors:  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu;  Ping Chen;  Jing Yang;  Wei Liu;  Xiang Li;  Shuangtao Liu;  Yao Xing;  Liqun Zhang;  Heng Long;  Mo Li
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Suppression of optical field leakage to GaN substrate in GaN-based green laser diode 期刊论文
Superlattices and Microstructures, 2017, 卷号: 102, 期号: 2017, 页码: 484-489
Authors:  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu;  Ping Chen;  Jing Yang;  Wei Liu;  Xiang Li;  Shuangtao Liu;  Yao Xing;  Liqun Zhang;  Heng Long;  Jian Zhang
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Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes 期刊论文
Superlattices and Microstructures, 2016, 卷号: 96, 页码: 220-225
Authors:  Wei Liu;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Zongshun Liu;  Jianjun Zhu;  Jing Yang;  Xiaoguang He;  Xiaojing Li;  Xiang Li;  Feng Liang;  Jianping Liu;  Liqun Zhang;  Hui Yang;  Yuantao Zhang;  Guotong Du
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Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes 期刊论文
Journal of Physics D: Applied Physics, 2016, 卷号: 49, 期号: 14, 页码: 145104
Authors:  Wei Liu;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Zongshun Liu;  Jianjun Zhu;  Xiang Li;  Feng Liang;  Jianping Liu;  Liqun Zhang;  Hui Yang;  Yuantao Zhang;  Guotong Du
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Comparative study of the differential resistance of GaAs- and GaN-based laser diodes 期刊论文
Journal of Vacuum Science & Technology B, 2016, 卷号: 34, 期号: 4, 页码: 041211
Authors:  Xiang Li;  Zongshun Liu;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Jianjun Zhu;  Jing Yang;  Lingcong Le;  Wei Liu;  Xiaoguang He;  Xiaojing Li;  Feng Liang
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